Difference between revisions of "ICP-RIE: Dielectric Etcher"

From the KNI Lab at Caltech
Jump to navigation Jump to search
(update primary staff)
 
(3 intermediate revisions by 2 users not shown)
Line 9: Line 9:
|PrimaryStaff = [[Kelly McKenzie]]
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|Techniques = Dielectric Material Etching
Line 36: Line 36:


== Resources ==
== Resources ==
===== Equipment Data =====
===== Equipment Status =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_Dielectric from the dropdown menu)
 
===== SOPs & Troubleshooting =====
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/vbv9di5bn1ha7tus6fq1br41533o21wu Oxford Instruments reservation policy]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
Line 85: Line 87:
* Substrate bias control by 30 / 300 W RIE source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling
* Helium back-side wafer cooling
== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Latest revision as of 05:32, 30 June 2022

Dielectric Etcher
ICP-RIE Dielectric-Material-Etcher .jpg
Instrument Type Etching
Techniques Dielectric Material Etching
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on LabRunr
Request training by email
Sign up for Oxford ICP email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model Plasmalab System 100

Description

The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.

Applications
  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
  • Si, SixNy, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • No metals
Dielectric Etcher Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2
  • N2O
  • NH3

Resources

Equipment Status
SOPs & Troubleshooting
Process Documents
Review Articles
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • Variable height 240 mm Cryo RIE electrode
  • Parameter ramping software (Not Bosch)
  • 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
  • Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
  • Chamber Gas ring, with split gas manifold
  • Alcatel 1300 l/s MAGLEV turbo pump
  • Single-wafer automatic insertion load lock with soft pump option
System Specifications
  • Chamber wall heating 80 °C
  • Cryo table range -140 to 400 °C
  • ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
  • Substrate bias control by 30 / 300 W RIE source
  • Helium back-side wafer cooling


Related Tools