DRIE: Bosch & Cryo ICP-RIE for Silicon
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Description
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching. The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
Applications
- Deep silicon etch using Bosch process
- Cryogenic etch of silicon
- pseudo-Bosch etch of silicon
Allowed material in DRIE
- Si, SixNy, Ge
- PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
- Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
- SF6
- C4F8
- O2
- Ar
- N2
Resources
SOPs & Troubleshooting
Process Documents
- Process Standards
- Silicon Waveguide Etch
- Bosch Si Etch
- High-Rate Bosch Si Etch
- Cryo-Si Etch
- Isotropic Si Etch
- Etch chamber cleaning recipes
- Comparison of etch rates using different sample-fixing oils
Review Articles
- Guidelines for Etching Silicon MEMS Structures
- Etch rates for MEMS Processing - Part I
- Etch Rates for MEMS Processing - Part II
- Dry Etching of Electronic Oxides, Polymers, and Semiconductors
- Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars
- David Henry's thesis on dry etching in the KNI's tools
Manufacturer Manuals
- Oxford Plasmalab System 100 DRIE Manual (login to LabRunr required)
- Edwards QDP 80 dry vacuum pump Manual
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
- Variable height 240 mm Cryo RIE electrode
- Parameter ramping software
- 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
- 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
- Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
- Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
- Alcatel 1300 l/s MAGLEV turbo pump
- Single-wafer automatic insertion load lock with soft pump option
- Single user license for Anisotropic Silicon Etch Process (Bosch)
System Specifications
- Chamber wall heating: 80 °C
- Cryo table range: -150 to 400 °C
- ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
- Substrate bias control by 30 / 300W RIE source
- Helium back-side wafer cooling