ICP-RIE: Dielectric Etcher

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Dielectric Etcher
ICP-RIE Dielectric-Material-Etcher .jpg
Instrument Type Etching
Techniques Dielectric Material Etching
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on LabRunr
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Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model Plasmalab System 100

Description

The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.

Applications
  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
  • Si, SixNy, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • No metals
Dielectric Etcher Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2
  • N2O
  • NH3

Resources

Equipment Data
SOPs & Troubleshooting
Process Documents
Review Articles
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • Variable height 240 mm Cryo RIE electrode
  • Parameter ramping software (Not Bosch)
  • 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
  • Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
  • Chamber Gas ring, with split gas manifold
  • Alcatel 1300 l/s MAGLEV turbo pump
  • Single-wafer automatic insertion load lock with soft pump option
System Specifications
  • Chamber wall heating 80 °C
  • Cryo table range -140 to 400 °C
  • ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
  • Substrate bias control by 30 / 300 W RIE source
  • Helium back-side wafer cooling