FlexAL II: Atomic Layer Deposition (ALD)
|
Description
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.
Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.
Applications
- Aluminum oxide and nitride deposition
- Silicon dioxide and nitride deposition
- Titanium oxide and nitride deposition
- Hafnium oxide deposition
- Niobium oxide and nitride deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
ALD Gas List (links to SDS)
ALD Precursor List (Links to SDS)
- TMA (aluminum)
- TDMAT (titanium)
- BTBAS (silicon)
- BDEAS (silicon) (SDS coming soon)
- TDMAH (hafnium)
- TBTDEN (niobium)
- Others upon request
Resources
Equipment Status
- LabRunr Equipment Status (Select ALD from the dropdown menu)
SOPs & Troubleshooting
- KNI ALD SOP
- Oxfords reservation and use policy
- Etcher toxic gas handling SOP
- Power Up Oxford ICP-RIE SOP
- Gas Status Board SOP
Process Documents (login to LabRunr required)
- Oxford Instruments ALD Materials Example Guide
- Oxford Instruments ALD gases and precursors
- Oxford Instruments ALD Process Acceptance report
- Oxford Instruments ALD Process Information guidance
- Oxford Instruments ALD Bias Control
Process Resources
- Aluminum Nitride (AlN)
- Aluminum Oxide (Al2O3)
- Hafnium Oxide (HfO2)
- Silicon Nitride (Si3N4)
- Titanium Nitride (TiN)
- Titanium Oxide (TiO2)
Manufacturer Manuals
- Oxford FlexAL ALD System manual (login to LabRunr)
- Adixen 4 Series Multistage Roots dry pumps brochure
- NovaSafe exhaust abatement system manual
- Oxford Ozone Delivery module manual (login to LabRunr)
- Oxford FlexAl system drawings (login to LabRunr)
Specifications
System Features
- FlexAL ALD Process Module
- The chamber is electrically heated to 150 °C
- Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
- Precursor Multi-Bubbler Cabinet 6 Way
- Standard Gas Pod externally mounted (8 lines max)
- 4 each Standard gasline and MFC for non-toxic gases
- 3 each By-passed gasline and MFC for toxic gases
- Ozone delivery system for ALD with up to 22% w/w ozone concentration
- Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
- Chamber process pump Pfeiffer/Adixen A604H kit
- FlexAL compact single wafer load lock kit
- Load Lock dry pump kit
- PC & 19" monitor
System Specifications
- ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
- ALD 600 °C biasable Inconel electrode
- Heated 250 mTorr high resolution temperature compensated capacitance manometer
- ALD 100 mm pumping pipework plus 100 mm fast APC
- Process Acceptance criteria for thermal and plasma Al2O3 and TiO2