Difference between revisions of "DRIE: Bosch & Cryo ICP-RIE for Silicon"
Jump to navigation
Jump to search
m (update primary staff phone) |
|||
| (2 intermediate revisions by 2 users not shown) | |||
| Line 35: | Line 35: | ||
== Resources == | == Resources == | ||
===== Equipment | ===== Equipment Status ===== | ||
* [https://caltech. | * [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_DRIE from the dropdown menu) | ||
===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP] | * [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP] | ||
* [https://caltech.box.com/s/vbv9di5bn1ha7tus6fq1br41533o21wu Oxford Instruments reservation policy] | |||
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | |||
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | * [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | ||
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | * [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | ||
| Line 86: | Line 89: | ||
* Substrate bias control by 30 / 300W RIE source | * Substrate bias control by 30 / 300W RIE source | ||
* Helium back-side wafer cooling | * Helium back-side wafer cooling | ||
== Related Tools == | |||
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE] | |||
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE] | |||
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE] | |||
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher] | |||
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD] | |||
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD] | |||
Revision as of 05:30, 30 June 2022
|
Description
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching. The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
Applications
- Deep silicon etch using Bosch process
- Cryogenic etch of silicon
- pseudo-Bosch etch of silicon
Allowed material in DRIE
- Si, SixNy, SiO2, Ge
- PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
- Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
- SF6
- C4F8
- O2
- Ar
- N2
Resources
Equipment Status
- LabRunr Equipment Status (Select Oxford_DRIE from the dropdown menu)
SOPs & Troubleshooting
- General Use SOP
- Oxford Instruments reservation policy
- Power Up Oxford ICP-RIE SOP
- Power Up Oxford ICP-RIE SOP
- Gas Status Board SOP
Process Documents
- Process Standards
- Silicon Waveguide Etch
- Bosch Si Etch
- High-Rate Bosch Si Etch
- Cryo-Si Etch
- Isotropic Si Etch
- Etch chamber cleaning recipes
- Comparison of etch rates using different sample-fixing oils
Review Articles
- Guidelines for Etching Silicon MEMS Structures
- Etch rates for MEMS Processing - Part I
- Etch Rates for MEMS Processing - Part II
- Dry Etching of Electronic Oxides, Polymers, and Semiconductors
- Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars
- David Henry's thesis on dry etching in the KNI's tools
Manufacturer Manuals
- Oxford Plasmalab System 100 DRIE Manual (login to LabRunr required)
- Edwards QDP 80 dry vacuum pump Manual
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
- Variable height 240 mm Cryo RIE electrode
- Parameter ramping software
- 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
- 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
- Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
- Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
- Alcatel 1300 l/s MAGLEV turbo pump
- Single-wafer automatic insertion load lock with soft pump option
- Single user license for Anisotropic Silicon Etch Process (Bosch)
System Specifications
- Chamber wall heating: 80 °C
- Cryo table range: -150 to 400 °C
- ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
- Substrate bias control by 30 / 300W RIE source
- Helium back-side wafer cooling