ORION NanoFab: Helium, Neon & Gallium FIB: Difference between revisions
(28 intermediate revisions by 8 users not shown) | |||
Line 7: | Line 7: | ||
|RoomLocation = B203D Steele | |RoomLocation = B203D Steele | ||
|LabPhone = 626-395-1548 | |LabPhone = 626-395-1548 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Alireza Ghaffari]] | ||
|StaffEmail = | |StaffEmail = alireza@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-3984 | ||
|Manufacturer = ZEISS (Carl Zeiss AG) | |Manufacturer = ZEISS (Carl Zeiss AG) | ||
|Model = ORION NanoFab | |Model = ORION NanoFab | ||
|Techniques = High-Resolution He Imaging,<br>He/Ne/Ga-FIB Etching,<br>He & Ne Ion Lithography,<br>Charge Compensation<br>(with Electron Flood Gun),<br>Cross-Sectioning | |Techniques = High-Resolution He Imaging,<br>He/Ne/Ga-FIB Etching,<br>He & Ne Ion Lithography,<br>Charge Compensation<br>(with Electron Flood Gun),<br>Cross-Sectioning | ||
|RequestTraining = | |RequestTraining = alireza@caltech.edu | ||
|EmailList = kni- | |EmailList = kni-orion | ||
|EmailListName = | |EmailListName = ORION | ||
}} | }} | ||
== Description == | == Description == | ||
Line 37: | Line 37: | ||
== Resources == | == Resources == | ||
===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/rpbtox8l31qi3kw3b014e3e8i4ctjpdy KNI Microscopy Policies] | ||
* [https://caltech.box.com/s/ss38zzz4pl73ufuojwl8hp7gbo4x4cls SOP for Basic Operation of ORION NanoFab] | |||
* [https://caltech.box.com/s/g5k3qt50jgrc0hyszjcmaxaeo9wtygx3 SOP for Operating Raith ELPHY MultiBeam Pattern Generator] | * [https://caltech.box.com/s/g5k3qt50jgrc0hyszjcmaxaeo9wtygx3 SOP for Operating Raith ELPHY MultiBeam Pattern Generator] | ||
* [https://caltech.box.com/s/ | |||
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter | ===== Process Recipes ===== | ||
* [https://caltech.box.com/s/ | These process recipes highlight a possible approach for different application. There are many different ways to operate and optimize parameters and this is generally sample dependent and need to be optimized by the operator for each sample. | ||
* [https://caltech.box.com/s/ybdwd4zi39p62bx13rc7f8o54444vuyz Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide] | |||
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide] | |||
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide] | |||
===== Video Tutorials ===== | ===== Video Tutorials ===== | ||
The resources are currently being updated. The updated tutorials will be uploaded shortly. | |||
===== Graphical Handouts ===== | ===== Graphical Handouts ===== | ||
Line 57: | Line 57: | ||
* [https://caltech.box.com/s/kxaxtslwol1o5a276f3lrqbhss8zvwje Ga-FIB Concepts] | * [https://caltech.box.com/s/kxaxtslwol1o5a276f3lrqbhss8zvwje Ga-FIB Concepts] | ||
===== Presentations ===== | ===== Presentations ===== | ||
* [https://caltech.box.com/s/ibe1nt5rd1u2kmvnfbjs2dj9lg28mch7 | * Helium & Neon Focused Ion Beam Microscopy: Principles, Techniques & Applications | ||
* [https://caltech.box.com/s/f4k8jan85n5lf6f2tutjx4rkfzjq7y68 | ** [https://caltech.box.com/s/ibe1nt5rd1u2kmvnfbjs2dj9lg28mch7 Pptx Slides] | [https://youtu.be/JXS3K8G2CVY YouTube Lecture] | ||
* Gallium Focused Ion Beam Microscopy: Principles, Techniques & Applications | |||
** [https://caltech.box.com/s/f4k8jan85n5lf6f2tutjx4rkfzjq7y68 PPtx Slides] | [https://youtu.be/3eSzisbNcGo YouTube Lecture] | |||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/4y5l7f7ca0pgs4hampyqp3b9e76e6u6q Zeiss ORION NanoFab Operation Manual (Caltech-only)] | ||
* Raith ELPHY MultiBeam: [https://caltech.box.com/s/2bvojmswnmlei95lei66ddnunm85pp22 Software Operation Manual] | [https://caltech.box.com/s/tt7omr53h1u88laulm1h5mooq4tbtcgi Software Reference Manual] |[https://caltech.box.com/s/64nmggwdfef8omz4m1zd50ftog4rhshm Step-by-Step Patterning Guide] | * Raith ELPHY MultiBeam: [https://caltech.box.com/s/2bvojmswnmlei95lei66ddnunm85pp22 Software Operation Manual] | [https://caltech.box.com/s/tt7omr53h1u88laulm1h5mooq4tbtcgi Software Reference Manual] |[https://caltech.box.com/s/64nmggwdfef8omz4m1zd50ftog4rhshm Step-by-Step Patterning Guide] | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/9rddai829l0xz09agynh1taugj67bo8z Nanometer Patterning & Visualization Engine (NPVE) Operation Manual] | ||
===== Simulation Software ===== | ===== Simulation Software ===== | ||
Line 71: | Line 74: | ||
* The KNI has a NIST-traceable standard against which FIB measurements can be compared. See Slides 54-55 of the [https://caltech.box.com/s/lulkj0pwm053akyya1shazg8wzgudq9f SEM Presentation] for details. Ask staff for help finding and using the standard in the lab. | * The KNI has a NIST-traceable standard against which FIB measurements can be compared. See Slides 54-55 of the [https://caltech.box.com/s/lulkj0pwm053akyya1shazg8wzgudq9f SEM Presentation] for details. Ask staff for help finding and using the standard in the lab. | ||
===== Sample Preparation ===== | ===== Sample Preparation ===== | ||
* Use the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | | * Use the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | | ||
O<sub>2</sub>/Ar Plasma Cleaner]] to remove hydrocarbons from the sample surface to avoid creating | O<sub>2</sub>/Ar Plasma Cleaner]] to remove hydrocarbons from the sample surface to avoid creating hydrocarbon deposition on your features while imaging them (the ORION's in-chamber plasma cleaner can be used in extreme cases where the sample must be cleaned directly before the experiment is conducted, without exposing it to the atmosphere while transferring it from the outside cleaner to the ORION chamber; excessive numbers of chamber cleanings can have adverse effects on the ORION over time so consult with staff on how and when to do this). | ||
* There is no need to coat non-conductive samples, the ORION NanoFab is equipped with a floodgun which can be used for charge compensation. | |||
* You can of course still use the [[Carbon Evaporator]] to make non-conductive samples conductive by applying 2-10 nm of evaporated carbon (first try using the in-chamber electron flood gun to alleviate charge artifacts). | |||
* | |||
* | |||
===== Guide to Choosing KNI SEMs & FIBs ===== | ===== Guide to Choosing KNI SEMs & FIBs ===== | ||
Line 134: | Line 133: | ||
===== Scanning Electron Microscopes (SEMs) ===== | ===== Scanning Electron Microscopes (SEMs) ===== | ||
* [[Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe|Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe]] | * [[Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe|Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe]] | ||
* [[Nova 200 NanoLab: SEM | * [[Nova 200 NanoLab: SEM & EDS | Nova 200 NanoLab: SEM & EDS]] | ||
* [[Sirion: SEM & EDS | Sirion: SEM & EDS]] | * [[Sirion: SEM & EDS | Sirion: SEM & EDS]] | ||
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM, ESEM, Lithography & Probe Station]] | * [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM, ESEM, Lithography & Probe Station]] | ||
===== Sample Preparation for Microscopy ===== | ===== Sample Preparation for Microscopy ===== | ||
* [[Carbon Evaporator | Carbon Evaporator (Leica EM ACE600) to make samples conductive]] | * [[Carbon Evaporator | Carbon Evaporator (Leica EM ACE600) to make samples conductive]] | ||
Line 147: | Line 147: | ||
===== Transmission Electron Microscopes ===== | ===== Transmission Electron Microscopes ===== | ||
* [[Tecnai TF-30: 300 kV TEM, STEM, EDS & HAADF | Tecnai TF-30: TEM, STEM, EDS & HAADF (50-300 kV)]] | * [[Tecnai TF-30: 300 kV TEM, STEM, EDS & HAADF | Tecnai TF-30: TEM, STEM, EDS & HAADF (50-300 kV)]] | ||
<!--- | |||
* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Tecnai TF-20: TEM, STEM, EDS, EELS, EFTEM & Lithography (40-200 kV)]] | * [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Tecnai TF-20: TEM, STEM, EDS, EELS, EFTEM & Lithography (40-200 kV)]] | ||
---> | |||
===== Scanning Probe Microscopes ===== | ===== Scanning Probe Microscopes ===== | ||
* [[Dimension Icon: Atomic Force Microscope (AFM) | Dimension Icon: Atomic Force Microscope (AFM)]] | * [[Dimension Icon: Atomic Force Microscope (AFM) | Dimension Icon: Atomic Force Microscope (AFM)]] | ||
* [[Dektak 3ST: Profilometer | Dektak 3ST: Profilometer]] | * [[Dektak 3ST: Profilometer | Dektak 3ST: Profilometer]] |
Latest revision as of 22:34, 5 February 2025
|
Description
The ORION NanoFab is a focused ion beam (FIB) system capable of generating three different ion beams – helium & neon from the gas field ion source (GFIS) that is aligned on the main optical axis, and gallium offset by 54°, as in a more traditional "dual beam" FIB/SEM (scanning electron microscope). The He beam, which can be formed into a sub-0.5 nm probe size, is capable of high-resolution imaging, lithography and etching, with each performing in the sub-5 nm regime. The Ne beam, with a 1.9 nm probe size, can etch sub-15 nm features with order-of-magnitude higher volume-removal rates than He, and perform sub-10 nm lithography on resist. The Ga beam, with a 5 nm minimum probe size, can remove relatively large volumes of material by direct etching. In all, the three beams, each operating over large energy ranges (see specifications below for details), provide multitudes of nanofabrication opportunities in a single system.
Imaging Applications
- Ultra-High-Resolution imaging (capable of resolving sub-5 nm features)
- High depth of field imaging (compared to SEM)
- Image non-conductive specimens using an electron flood gun for charge compensation
Etching Applications
- Directly etch patterns into material with all three beams – He, Ne & Ga
- Cutting & Imaging Cross-Sections (using Ga)
- Final thinning of TEM lamellae (using Ne)
- Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
Lithography Applications
- High-resolution patterning on resist (35 keV He ions can perform better than 100 keV electrons)
- Automatic alignment to markers and automated processing (manually confirmed alignment also available)
- Resist patterning on non-conductive specimens
- Resist Pattering on curved substrates due to high depth of field
- Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
Resources
SOPs & Troubleshooting
- KNI Microscopy Policies
- SOP for Basic Operation of ORION NanoFab
- SOP for Operating Raith ELPHY MultiBeam Pattern Generator
Process Recipes
These process recipes highlight a possible approach for different application. There are many different ways to operate and optimize parameters and this is generally sample dependent and need to be optimized by the operator for each sample.
- Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide
- Helium Ion Beam Lithography (HIBL) – Parameter Guide
- Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide
Video Tutorials
The resources are currently being updated. The updated tutorials will be uploaded shortly.
Graphical Handouts
Presentations
- Helium & Neon Focused Ion Beam Microscopy: Principles, Techniques & Applications
- Gallium Focused Ion Beam Microscopy: Principles, Techniques & Applications
Manufacturer Manuals
- Zeiss ORION NanoFab Operation Manual (Caltech-only)
- Raith ELPHY MultiBeam: Software Operation Manual | Software Reference Manual |Step-by-Step Patterning Guide
- Nanometer Patterning & Visualization Engine (NPVE) Operation Manual
Simulation Software
- The Stopping & Range of Ions in Matter (SRIM) – simulate i-beam/specimen interactions
- CASINO Electron Beam Simulation Software – simulate e-beam/specimen interactions
Calibrate Measurements with NIST Standard
- The KNI has a NIST-traceable standard against which FIB measurements can be compared. See Slides 54-55 of the SEM Presentation for details. Ask staff for help finding and using the standard in the lab.
Sample Preparation
- Use the O2/Ar Plasma Cleaner to remove hydrocarbons from the sample surface to avoid creating hydrocarbon deposition on your features while imaging them (the ORION's in-chamber plasma cleaner can be used in extreme cases where the sample must be cleaned directly before the experiment is conducted, without exposing it to the atmosphere while transferring it from the outside cleaner to the ORION chamber; excessive numbers of chamber cleanings can have adverse effects on the ORION over time so consult with staff on how and when to do this).
- There is no need to coat non-conductive samples, the ORION NanoFab is equipped with a floodgun which can be used for charge compensation.
- You can of course still use the Carbon Evaporator to make non-conductive samples conductive by applying 2-10 nm of evaporated carbon (first try using the in-chamber electron flood gun to alleviate charge artifacts).
Guide to Choosing KNI SEMs & FIBs
Specifications
Manufacturer Specifications
Overall System Specifications
- Eucentric Height: ~9.1 mm working distance (WD)
- Allowable Sample Width: 80 mm (this is the width of the load lock opening)
- Stage Range: ±24 mm X & Y travel, 8 mm Z travel, -10 to 58° tilt, 360° rotation
- ETD Grid Bias Range: -250 to 250 V
- Stage Bias Range: -500 to 500 V
- Ultimate Vacuum: 2e-7 Torr
He-FIB Specifications
- Minimum Feature Size Resolved with He Imaging: ~3 nm
- Minumum Probe Size: 0.35 nm
- Voltage Range: 5 to 40 kV
- Current Range: 0.1 to 100 pA
Ne-FIB Specifications
- Minimum Feature Size Resolved with Ne Imaging: ~7 nm
- Minumum Probe Size: 1.9 nm
- Voltage Range: 5 to 35 kV
- Current Range: 0.1 to 50 pA
Ga-FIB Specifications
- Minimum Feature Size Resolved with Ga Imaging: ~10 nm
- Minumum Probe Size: 3 nm
- Voltage Range: 1 to 30 kV
- Current Range: 1 pA to 100 nA
Electron Flood Gun Specifications
- Probe Diameter: millimeters (can be roughly focused)
- Voltage Range: 0.025 to 1.0 kV
- Current: ~1 μA
- Dwell Time Range: 50 to 10000 μs
Raith ELPHY MultiBeam Specifications
- Shapes Available: Polygons (area dose), Single Pass Lines (line dose) & Dot Arrays (point dose) of any arbitrary shape
- Import CAD files as .dxf or .gds files
- Writing Speed: 20 MHz
- Digital-to-Analog Converter (DAC): 16-bit
Related Instrumentation in the KNI
Focused Ion Beam (FIB) Systems
Scanning Electron Microscopes (SEMs)
- Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe
- Nova 200 NanoLab: SEM & EDS
- Sirion: SEM & EDS
- Quanta 200F: SEM, ESEM, Lithography & Probe Station
Sample Preparation for Microscopy
- Carbon Evaporator (Leica EM ACE600) to make samples conductive
- Oxygen & Argon Plasma Cleaner (Tergeo Plus ICP- & CCP-RIE) to remove hydrocarbons from surface
Lithography
- EBPG 5200: Electron Beam Pattern Generator (100 kV)
- EBPG 5000+: Electron Beam Pattern Generator (100 kV)
- Quanta 200F: SEM, ESEM, Lithography & Probe Station
- ORION NanoFab: Helium, Neon & Gallium FIB