EBPG 5200: 100 kV Electron Beam Lithography

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EBPG 5200
Wavelength-scale-Piezoelectric-Transducer Alp-Sipahigil.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on LabRunr
Request training by email
Sign up for EBPG email list
Lab Location B233C Steele
Lab Phone 626-395-1531 & -1540
Manufacturer Raith Lithography BV
Model EBPG 5200
EBPG-5200.jpg

Description

The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).

Operational Applications
  • Non-aligned electron beam lithography
  • Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

Equipment Data
General SOPs
Training Materials
Sample Prep and Writing SOPs
Advanced Troubleshooting SOPs
Data Preparation Resources
Lithography Process Information
Manufacturer Manuals

Specifications

  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA to 200 nA
  • Main Field Size: Up to 1 mm x 1 mm
  • Main Field Resolution: 20 bit
  • Maximum Writing Frequency: 100 MHz
  • Aperture Sizes: 200 μm, 300 μm, 400 μm



Related Instrumentation in the KNI

Electron Beam Lithography
Ion Beam Lithography