Difference between revisions of "Dual Chamber RIE: Silicon, III-V Material & Organics Etcher"

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|RoomLocation = B235 Steele
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = nathslee@caltech.edu
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Model = SLR 720
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}}
}}
== Description ==
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon semiconductors with a traditional RIE process.
===== Applications =====
===== Applications =====
* Silicon Etching
* Silicon Etching
* III-V Material Etching
* Organic Material Etching
* Organic Material Etching


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== Resources ==
== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select RIE from the dropdown menu)
===== SOPs & Troubleshooting =====
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
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===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]


===== Review Articles =====
===== Review Articles =====
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===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* In progress
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]


== Specifications ==
== Specifications ==
===== Manufacturer Specifications =====
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
* In progress
===== System Features =====
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* In progress
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF<sub>6</sub>, and C<sub>4</sub>F<sub>8</sub>)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV  turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
===== System Specifications =====
* Chamber wall heating 80 &deg;C
* In progress
* Cryo table range -150 to 400 &deg;C
 
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
 
* Substrate bias control by 30 / 300 W RIE source
== Related Tools ==
* Helium back-side wafer cooling
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Latest revision as of 05:32, 30 June 2022

Dual Chamber RIE
Dual-Chamber-RIE Plasma-Therm-SLR.jpg
Instrument Type Etching
Techniques Silicon and
compound semiconductor
Reactive Ion Etching
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on LabRunr
Request training by email
Sign up for Plasmatherm RIE email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Plasma-Therm
Model SLR 720

Description

The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon semiconductors with a traditional RIE process.

Applications
  • Silicon Etching
  • Organic Material Etching
Allowed Material in RIE
  • Si, SixNy, SiO2, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • Buried/backside metal ok if never exposed (not an etch stop)
RIE Gas List
  • SF6
  • CHF3
  • CF4
  • O2
  • Ar
  • He
  • H2

Resources

Equipment Status
SOPs & Troubleshooting
Process Documents
Review Articles
Manufacturer Manuals
  • In progress

Specifications

Manufacturer Specifications
  • In progress
System Features
  • In progress
System Specifications
  • In progress


Related Tools