Contact Mask Aligners: MA6 & MA6/BA6

Suss Contact Mask Aligner MA6/BA6 Instrument Type Lithography Techniques Frontside Alignment, Backside Alignment, Flood exposure Staff Manager Bert Mendoza Staff Email bertm@caltech.edu Staff Phone 626-395-4075 Reserve time on LabRunr Request training by email Lab Location B217 Steele Lab Phone 626-395-1535 Manufacturer Suss MicroTec Model MA6 & MA6/BA6

Description

Suss MicroTec model MA6 Mask Aligner (model MA6/BA6 is shown at the top of the infobox)

The contact mask aligner is a tool that enables front- and back-side alignment of photo masks to create structures as small as 500 nm on sample sizes up to 6 inches. These systems are ideally suited for rapid definition of sub-micron devices through contact printing, and enable the high-resolution alignment of several lithographic layers to define complex devices. They are typically used to define contacts and connections to the nanostructures that are defined using the KNI's other fabrication instruments (e.g. e-beam lithography). The MA6/BA6 is also configured to do bond aligning in support of the Suss Microtec SB6L Wafer Bonder.

Suss1 MA6/BA6 Applications

• Front Side Flood Exposure (no mask)
• Front Side Alignment & Exposure
• Back Side Alignment with Front Side Exposure

Suss2 MA6 Applications

• Front Side Alignment & Exposure
• Back Side Alignment with Front Side Exposure

Resources

Equipment Data

• Lithography Pass-down equipment information

SOPs & Troubleshooting

• General SOP & Troubleshooting
• Lamp Change SOP
• Lamp Re-Ignition SOP
• Suss 1 Lamp Re-Ignition Video
• Suss 2 Lamp Re-Ignition Video

Optical Lithography Resources

• Optical Lithography Resources Page
• Laurell Spinner Cleaning SOP
• Laurell Spinner - Spinning Resist Video

Process Recipes

• Optical Lithography Photoresist Recipes

Manufacturer Manuals

• Suss MA6/BA6 System Manual
• Suss MA6/BA6 Brochure
• Lamp Power Supply Manual
• Alignment Mark Suggestion Document

Specifications

Manufacturer Specifications

• Whole wafers 2” up to 6” can be loaded.
• Samples pieces up to 6”x6” square can be loaded.
• Samples up to 6mm thick can be loaded..
• Exposure Resolution:

Soft Contact Mode = 1 - 2 um

Hard Contact Mode = 1 um

Soft Vacuum Contact Mode = 1 - 0.5 um

Vacuum Contact Mode = 0.4 - 0.5 um

Suss 1 Exposure Settings

• Channel 1 is 365nm wavelength at 15 mW/cm2.
• Channel 2 is 405nm wavelength at 25 mW/cm2.

Suss 2 Exposure Settings

• Channel 1 is 365nm wavelength at 10 mW/cm2.
• Channel 2 is 405nm wavelength at 15 mW/cm2.

Related Instrumentation in the KNI

Electron Beam Lithography

• EBPG 5200: 100 kV Electron Beam Lithography
• EBPG 5000+: 100 kV Electron Beam Lithography
• Quanta 200F: SEM with 1-30 kV Electron Beam Lithography
• Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography

Ion Beam Lithography

• ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy

Optical Lithography

• i-Line Wafer Stepper: GCA model 6300
• Nano Imprint Lithography: NILT CNI-PV 2.1
• Direct-Write Laser System: Heidelberg Instruments DWL-66
• Two-Photon Lithography (aka Microscale 3D Printing): Nanoscribe Photonic Professional GT
• Optical Lithography Resources