Difference between revisions of "Plasma-Enhanced Chemical Vapor Deposition (PECVD)"
Jump to navigation
Jump to search
m |
|||
| Line 44: | Line 44: | ||
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx] | * [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx] | ||
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx] | * [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx] | ||
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous | * [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe] | ||
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)] | |||
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | * [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | ||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
| Line 70: | Line 71: | ||
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes | * 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes | ||
* 600 W solid-state 50-460 kHz LF generator | * 600 W solid-state 50-460 kHz LF generator | ||
== Related Instrumentation in the KNI == | == Related Instrumentation in the KNI == | ||
===== Sputtering Systems ===== | ===== Sputtering Systems ===== | ||
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]] | |||
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]] | * [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]] | ||
===== Electron Beam Evaporation Systems ===== | ===== Electron Beam Evaporation Systems ===== | ||
| Line 82: | Line 85: | ||
===== Chemical Vapor Deposition ===== | ===== Chemical Vapor Deposition ===== | ||
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]] | * [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]] | ||
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]] | |||
Revision as of 00:42, 8 November 2019
|
Description
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
Applications
- Amorphous Silicon Deposition
- Silicon Dioxide Deposition
- Silicon Nitride Deposition
Allowed material in PECVD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
PECVD Gas List
- SiH4 (5% in N2 and Ar)
- NH3
- N2O
- N2
- 80%CF4/O2
Resources
SOPs & Troubleshooting
Process Documents
- Process Standards
- High rate SiOx
- High rate SiNx
- Low Rate SiOx
- Low rate SiNx
- KNI's Amorphous Silicon recipe
- Amorphous Silicon Deposition (Silane/helium)
- Etch chamber cleaning recipes
Manufacturer Manuals
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
- Heated upper electrode to prevent condensation of low vapor pressure precursors
- PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
- Parameter ramping software
- 5 Torr capacitance manometer for process control, and penning for base pressure measurement
- Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
- Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
- Chamber Gas ring, with split gas manifold
- Liquid vapor delivery system
- Single-wafer automatic insertion load lock with soft pump option
System Specifications
- Chamber wall heating 80 °C
- 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
- 600 W solid-state 50-460 kHz LF generator