Difference between revisions of "Plasma-Enhanced Chemical Vapor Deposition (PECVD)"

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{{InstrumentInfoboxOneImage|
{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|InstrumentName = PECVD
|HeaderColor = #FFE2B9
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =  
|ImageTwo =  
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|RoomLocation = B235 Steele
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = nathslee@caltech.edu
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Model = Plasmalab System 100
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}}
}}
== Description ==
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions  
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
===== Applications =====
* amorphous silicon deposition
* Amorphous Silicon Deposition
* silicon dioxide deposition
* Silicon Dioxide Deposition
* silicon nitride deposition
* Silicon Nitride Deposition
 
===== Allowed material in PECVD System =====
===== Allowed material in PECVD System =====
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* hard masks compatible with process temperature
* Hard masks compatible with process temperature
 
 
===== PECVD Gas List =====
===== PECVD Gas List =====
* 80%CF<sub>4</sub>/O<sub>2</sub>
* 5% SiH<sub>4</sub> in N<sub>2</sub>
* 5% SiH<sub>4</sub> in Ar
* NH<sub>3</sub>
* N<sub>2</sub>O
* N<sub>2</sub>
* N<sub>2</sub>
* N<sub>2</sub>O
* Mixture of CF<sub>4</sub> and O<sub>2</sub> (4:1) for Plasma Clean
* NH<sub>3</sub>
* SiH<sub>4</sub> (5% in N<sub>2</sub> and Ar)


== Resources ==
== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_PECVD from the dropdown menu)
===== SOPs & Troubleshooting =====
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
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* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
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* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]


===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual]
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]


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===== Manufacturer Specifications =====
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system  
* PC 2000 Operating system  
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 deg C) lower electrode with central wafer lift mechanism  
* PECVD 205 mm electrically heated (700 &deg;C) lower electrode with central wafer lift mechanism  
* Parameter ramping software
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve. Chamber base pressure turbo, backed by a refurbished Dry pump with roots
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with 2 non-toxic and 3 toxic digital mass-flow-controlled gas lines and cleaning gas
* Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system  
* Liquid vapor delivery system  
* Single-wafer automatic insertion load lock with soft pump option
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 &deg;C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator
== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]
===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]


===== System Specifications =====
===== Chemical Vapor Deposition =====
* Chamber wall heating 80 deg C
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit. The generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes.
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]
* 600 W solid-state 50 kHz - 460 kHz LF generator

Latest revision as of 05:29, 30 June 2022

PECVD
PECVD Oxford-System-100.jpg
Instrument Type Deposition
Techniques Amorphous Silicon Deposition,
Silicon Dioxide Deposition,
Silicon Nitride Deposition
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on LabRunr
Request training by email
Sign up for Oxford PECVD email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model Plasmalab System 100

Description

The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.

Applications
  • Amorphous Silicon Deposition
  • Silicon Dioxide Deposition
  • Silicon Nitride Deposition
Allowed material in PECVD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature
PECVD Gas List
  • 5% SiH4 in N2
  • 5% SiH4 in Ar
  • NH3
  • N2O
  • N2
  • Mixture of CF4 and O2 (4:1) for Plasma Clean

Resources

Equipment Status
SOPs & Troubleshooting
Process Documents
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
  • Heated upper electrode to prevent condensation of low vapor pressure precursors
  • PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
  • Parameter ramping software
  • 5 Torr capacitance manometer for process control, and penning for base pressure measurement
  • Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
  • Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
  • Chamber Gas ring, with split gas manifold
  • Liquid vapor delivery system
  • Single-wafer automatic insertion load lock with soft pump option
System Specifications
  • Chamber wall heating 80 °C
  • 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
  • 600 W solid-state 50-460 kHz LF generator


Related Instrumentation in the KNI

Sputtering Systems
Electron Beam Evaporation Systems
Chemical Vapor Deposition