Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD: Difference between revisions
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== Resources == | == Resources == | ||
===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/zowed19nz12hdxtfxuep3h936jj36yhs KNI SOP] | ||
* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy] | * [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy] | ||
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP] | * [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP] | ||
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* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx] | * [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx] | ||
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx] | * [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx] | ||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https:// | * [https://caltech.box.com/s/ivcayqzwzha33hag4xd64fb42ma0ithk Oxford PECVD System Manual] | ||
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual] | * [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual] | ||
Revision as of 19:24, 21 October 2026
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Description
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
Applications
- Silicon Dioxide Deposition
- Silicon Nitride Deposition
Allowed material in PECVD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
- Other materials buried in stack
PECVD Gas List
- 5% SiH4 in N2
- 5% SiH4 in Ar
- NH3
- N2O
- N2
- CF4 (for plasma clean)
Resources
SOPs & Troubleshooting
- KNI SOP
- Oxfords reservation and use policy
- Etcher toxic gas handling SOP
- Power Up Oxford ICP-RIE SOP
- Gas Status Board SOP
Process Documents
Manufacturer Manuals
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
- Heated upper electrode to prevent condensation of low vapor pressure precursors
- PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
- Parameter ramping software
- 5 Torr capacitance manometer for process control, and penning for base pressure measurement
- Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
- Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
- Chamber Gas ring, with split gas manifold
- Liquid vapor delivery system
- Single-wafer automatic insertion load lock with soft pump option
System Specifications
- Chamber wall heating 80 °C
- 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
- 600 W solid-state 50-460 kHz LF generator