Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD: Difference between revisions

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== Description ==
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.  
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.  
===== Applications =====
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
* Silicon Nitride Deposition
Line 25: Line 24:
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
* Hard masks compatible with process temperature
* Hard masks compatible with process temperature
* Other materials buried in stack
===== PECVD Gas List =====
===== PECVD Gas List =====
* 5% SiH<sub>4</sub> in N<sub>2</sub>  
* 5% SiH<sub>4</sub> in N<sub>2</sub>  
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* N<sub>2</sub>O
* N<sub>2</sub>O
* N<sub>2</sub>
* N<sub>2</sub>
* Mixture of CF<sub>4</sub> and O<sub>2</sub> (4:1) for Plasma Clean
* CF4 (for plasma clean)


== Resources ==
== Resources ==
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===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
Line 49: Line 48:
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]


Revision as of 19:18, 21 October 2026

PECVD
Instrument Type Deposition
Techniques Amorphous Silicon Deposition,
Silicon Dioxide Deposition,
Silicon Nitride Deposition
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model PlasmaPro System 100

Description

The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.

Applications
  • Silicon Dioxide Deposition
  • Silicon Nitride Deposition
Allowed material in PECVD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature
  • Other materials buried in stack
PECVD Gas List
  • 5% SiH4 in N2
  • 5% SiH4 in Ar
  • NH3
  • N2O
  • N2
  • CF4 (for plasma clean)

Resources

SOPs & Troubleshooting
Process Documents
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
  • Heated upper electrode to prevent condensation of low vapor pressure precursors
  • PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
  • Parameter ramping software
  • 5 Torr capacitance manometer for process control, and penning for base pressure measurement
  • Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
  • Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
  • Chamber Gas ring, with split gas manifold
  • Liquid vapor delivery system
  • Single-wafer automatic insertion load lock with soft pump option
System Specifications
  • Chamber wall heating 80 °C
  • 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
  • 600 W solid-state 50-460 kHz LF generator


Sputtering Systems
Electron Beam Evaporation Systems
Chemical Vapor Deposition
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