Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD: Difference between revisions

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{{InstrumentInfoboxOneImage|
{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|InstrumentName = Oxide/Nitride PECVD
|HeaderColor = #F2682A
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageOne = OxidenitridePECVD.jpg
|ImageTwo =  
|ImageTwo =  
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
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|Manufacturer = Oxford Instruments
|Manufacturer = Oxford Instruments
|Model = PlasmaPro System 100
|Model = PlasmaPro System 100
|Techniques = Amorphous Silicon Deposition,<br>Silicon Dioxide Deposition,<br>Silicon Nitride Deposition
|Techniques = Silicon Dioxide Deposition,<br>Silicon Nitride Deposition
|EmailList =  kni-oxfordpecvd
|EmailList =  kni-oxfordpecvd
|EmailListName = Oxford PECVD
|EmailListName = Oxford PECVD
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* N<sub>2</sub>O
* N<sub>2</sub>O
* N<sub>2</sub>
* N<sub>2</sub>
* O<sub>2</sub>
* CF4 (for plasma clean)
* CF4 (for plasma clean)


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===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/ivcayqzwzha33hag4xd64fb42ma0ithk Oxford PECVD System Manual]
* [https://caltech.box.com/s/tv85adw2z96pkqeoynxa5ixp61g8wiio Oxford PlasmaPro PECVD System Manual]
* [https://caltech.box.com/s/r2d8bk8mrtxa2qf0bwamuxn43cpjml4f PTIQ User Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]


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* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system  
* PTIQ operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* Heated upper electrode to prevent condensation of low vapor pressure precursors

Latest revision as of 16:13, 27 October 2026

Oxide/Nitride PECVD
Instrument Type Deposition
Techniques Silicon Dioxide Deposition,
Silicon Nitride Deposition
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model PlasmaPro System 100

Description

The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.

Applications
  • Silicon Dioxide Deposition
  • Silicon Nitride Deposition
Allowed material in PECVD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature
  • Other materials buried in stack
PECVD Gas List
  • 5% SiH4 in N2
  • 5% SiH4 in Ar
  • NH3
  • N2O
  • N2
  • O2
  • CF4 (for plasma clean)

Resources

SOPs & Troubleshooting
Process Documents
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PTIQ operating system
  • PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
  • Heated upper electrode to prevent condensation of low vapor pressure precursors
  • PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
  • Parameter ramping software
  • 5 Torr capacitance manometer for process control, and penning for base pressure measurement
  • Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
  • Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
  • Chamber Gas ring, with split gas manifold
  • Liquid vapor delivery system
  • Single-wafer automatic insertion load lock with soft pump option
System Specifications
  • Chamber wall heating 80 °C
  • 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
  • 600 W solid-state 50-460 kHz LF generator


Sputtering Systems
Electron Beam Evaporation Systems
Chemical Vapor Deposition
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