Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD

Oxide/Nitride PECVD Instrument Type Deposition Techniques Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition Staff Manager Kelly McKenzie Staff Email kmmckenz@caltech.edu Staff Phone 626-395-5732 Reserve time on FBS Request training via FBS User Dashboard Lab Location B235 Steele Lab Phone 626-395-1532 Manufacturer Oxford Instruments Model PlasmaPro System 100

Description

The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.

Applications

• Silicon Dioxide Deposition
• Silicon Nitride Deposition

Allowed material in PECVD System

• Si, Si_xN_y, SiO₂, SOI
• Hard masks compatible with process temperature
• Other materials buried in stack

PECVD Gas List

• 5% SiH₄ in N₂
• 5% SiH₄ in Ar
• NH₃
• N₂O
• N₂
• O₂
• CF4 (for plasma clean)

Resources

SOPs & Troubleshooting

• KNI SOP
• Oxfords reservation and use policy
• Etcher toxic gas handling SOP
• Power Up Oxford ICP-RIE SOP
• Gas Status Board SOP

Process Documents

• KNI's 350C SiO2 recipe
• Process Standards
• High rate SiOx
• High rate SiNx
• Low Rate SiOx
• Low rate SiNx

Manufacturer Manuals

• Oxford PlasmaPro PECVD System Manual
• PTIQ User Manual
• Alcatel ADS 602P dry vacuum pump Manual

Specifications

Manufacturer Specifications

• Manufacturer Data Sheet

System Features

• Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
• PTIQ operating system
• PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
• Heated upper electrode to prevent condensation of low vapor pressure precursors
• PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
• Parameter ramping software
• 5 Torr capacitance manometer for process control, and penning for base pressure measurement
• Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
• Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
• Chamber Gas ring, with split gas manifold
• Liquid vapor delivery system
• Single-wafer automatic insertion load lock with soft pump option

System Specifications

• Chamber wall heating 80 °C
• 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
• 600 W solid-state 50-460 kHz LF generator

Related Instrumentation in the KNI

Sputtering Systems

• ATC Orion 8: Dielectric Sputter System
• ATC Orion 8: Chalcogenide Sputter System

Electron Beam Evaporation Systems

• Labline: Electron Beam Evaporator
• CHA: Electron Beam Evaporator

Chemical Vapor Deposition

• FlexAL II: Atomic Layer Deposition (ALD)
• Plasma-Enhanced Chemical Vapor Deposition (PECVD)