ICP-RIE: Dielectric Etcher

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Dielectric Etcher
ICP-RIE Dielectric-Material-Etcher.jpg
Instrument Type Etching
Techniques pseudoBosch
Cryogenic silicon etch
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
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Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model {{{Model}}}

Description

The Dielectric Inductively Coupled Plasma - Reactive Ion Etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.

Applications
  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
  • Si, SixNy, SiO2
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • No metals
Dielectric Etcher Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2
  • CHF3
  • N2O
  • NH3

Resources

SOPs & Troubleshooting
Process Documents
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals

Specifications

Manufacturer Specifications
Mode 1 Specifications
  • Voltage Range: 0.5 to 30.0 kV
  • Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
  • etc.
Mode 2 Specifications
  • Voltage Range: 5.0 to 30.0 kV
  • Current Range: 10 pA - 20 nA
  • etc.