Difference between revisions of "ICP-RIE: Dielectric Etcher"

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* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

Revision as of 22:11, 22 May 2019

Dielectric Etcher
ICP-RIE Dielectric-Material-Etcher.jpg
Instrument Type Etching
Techniques pseudoBosch
Cryogenic silicon etch
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model {{{Model}}}


The Dielectric Inductively Coupled Plasma - Reactive Ion Etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.

  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
  • Si, SixNy, SiO2
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • No metals
Dielectric Etcher Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2
  • CHF3
  • N2O
  • NH3


SOPs & Troubleshooting
Process Documents
Manufacturer Manuals


Manufacturer Specifications
System Features
  • Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • ICP process chamber with 200mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • Variable height 240mm Cryo RIE electrode
  • Parameter ramping software (Not Bosch)
  • 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
  • Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
  • Chamber Gas ring, with split gas manifold
  • Alcatel 1300 l/s MAGLEV turbo pump
  • Single-wafer automatic insertion load lock with soft pump option

System Specifications
  • Chamber wall heating 80 deg C
  • Cryo table range -140 to 400 deg C
  • ICP 380mm remote high-density plasma source with 5kW RF generator and automatic matching unit close-coupled to the source.
  • Substrate bias control by 30 / 300W RIE source
  • Helium back-side wafer cooling