Difference between revisions of "EBPG 5000+: 100 kV Electron Beam Lithography"

From the KNI Lab at Caltech
Jump to navigation Jump to search
Line 72: Line 72:


===== Lithography Process Information =====
===== Lithography Process Information =====
* [https://caltech.box.com/s/tfg34i85sknxsrqqbrjtszmd0fqhgnt1 Bilayer PMMA Liftoff Procedure]
* [https://caltech.box.com/s/nwuxjbfm0fp0lb4k12albsr3zbnqk9po Bi-Layer PMMA Resist Spinning Recipe]
* [https://caltech.box.com/s/2pumpha7ywa8zenvfzjxlggglvm4u3h5 MAN Resist Data Sheet]
* [https://caltech.box.com/s/2pumpha7ywa8zenvfzjxlggglvm4u3h5 MAN Resist Data Sheet]
* [https://caltech.box.com/s/lw2h56h0lqabwo82yofu52dqgi61gcp9 PMMA Resist Data Sheet]
* [https://caltech.box.com/s/lw2h56h0lqabwo82yofu52dqgi61gcp9 PMMA Resist Data Sheet]

Revision as of 18:01, 12 March 2020

EBPG 5000+
EBPG-5000+.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on LabRunr
Request training by email
Sign up for EBPG email list
Lab Location B233C Steele
Lab Phone 626-395-1531 & -1540
Manufacturer Raith Lithography BV
Model EBPG 5000+

Description

The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).

Operational Applications
  • Non-aligned electron beam lithography
  • Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

General SOPs
Sample Prep and Writing SOPs
Troubleshooting SOPs
Data Preparation Resources
Lithography Process Information
Manufacturer Manuals

Specifications

Manufacturer Specifications and Manuals
Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA to 200 nA
  • Main Field Size: Up to 1 mm x 1 mm
  • Main Field Resolution: 20 bit
  • Maximum Writing Frequency: 100 MHz
  • Aperture Sizes: 300μm, 300μm, 400μm



Related Instrumentation in the KNI

Electron Beam Lithography
Ion Beam Lithography