Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

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Dual Chamber RIE
Instrument Type Etching
Techniques Silicon and
compound semiconductor
Reactive Ion Etching
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
Sign up for Plasmatherm RIE email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Plasma-Therm
Model SLR 720


The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.

  • Silicon Etching
  • III-V Material Etching
  • Organic Material Etching
Allowed Material in RIE
  • Si, SixNy, SiO2, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • Buried/backside metal ok if never exposed (not an etch stop)
RIE Gas List
  • SF6
  • CHF3
  • CF4
  • O2
  • Ar
  • He
  • H2


SOPs & Troubleshooting
Process Documents
Manufacturer Manuals


Manufacturer Specifications
System Features
  • Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • Variable height 240 mm Cryo RIE electrode
  • Parameter ramping software
  • 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
  • Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
  • Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
  • Alcatel 1300 l/s MAGLEV turbo pump
  • Single-wafer automatic insertion load lock with soft pump option
  • Single user license for Anisotropic Silicon Etch Process (Bosch)
System Specifications
  • Chamber wall heating 80 °C
  • Cryo table range -150 to 400 °C
  • ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
  • Substrate bias control by 30 / 300 W RIE source
  • Helium back-side wafer cooling