DRIE: Bosch & Cryo ICP-RIE for Silicon

From the KNI Lab at Caltech
Jump to navigation Jump to search
Silicon-Microcones Paul-A-Kempler.jpg
Instrument Type Etching
Techniques Bosch, Cryogenic etch of silicon
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model {{{Model}}}
DRIE Bosch-and-Cryo ICP–RIE.jpg


The MEMS / Bosch / Cryo Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) is is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive ion etching (DRIE) via the Bosch process, allowing silicon etching with C4F8 and SF6 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 micrometers/minute. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon only.

  • Deep silicon etch using Bosch process
  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in DRIE
  • Si, SixNy, SiO2, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2


SOPs & Troubleshooting
Process Documents
Manufacturer Manuals


Manufacturer Specifications
Mode 1 Specifications
  • Voltage Range: 0.5 to 30.0 kV
  • Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
  • etc.
Mode 2 Specifications
  • Voltage Range: 5.0 to 30.0 kV
  • Current Range: 10 pA - 20 nA
  • etc.