FlexAL II: Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) Instrument Type Deposition Techniques Atomic Layer Deposition of Oxides and Nitrides Staff Manager Nathan S. Lee Staff Email nathslee@caltech.edu Staff Phone 626-395-1319 Reserve time on FBS Request training via FBS User Dashboard Lab Location B235 Steele Lab Phone 626-395-1532 Manufacturer Oxford Instruments Model FlexAL II

Description

The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Applications

• Aluminum oxide and nitride deposition
• Silicon dioxide and nitride deposition
• Titanium oxide and nitride deposition
• Hafnium oxide deposition
• Niobium oxide and nitride deposition
• Deposition of other films can be made available upon request

Allowed material in ALD System

• Si, Si_xN_y, SiO₂, SOI
• Hard masks compatible with process temperature

ALD Gas List

• SF₆
• N₂
• O₂
• O₃
• NH₃
• H₂
• Ar

ALD Precursor List

• TMA (aluminum)
• TDMAT (titanium)
• BTBAS (silicon)
• TDMAH (hafnium)
• TBTDEN (niobium)
• Others upon request

Resources

SOPs & Troubleshooting

• KNI SOP
• Etcher toxic gas handling SOP
• Power Up Oxford ICP-RIE SOP
• Gas Status Board SOP

Process Documents (login to LabRunr required)

• Oxford Instruments ALD Materials Example Guide
• Oxford Instruments ALD gases and precursors
• Oxford Instruments ALD Process Acceptance report
• Oxford Instruments ALD Process Information guidance
• Oxford Instruments ALD Bias Control

Process Resources

• Aluminum Nitride (AlN)
• Aluminum Oxide (Al₂O₃)
• Hafnium Oxide (HfO₂)
• Silicon Nitride (Si₃N₄)
• Titanium Nitride (TiN)
• Titanium Oxide (TiO₂)

Manufacturer Manuals

• Oxford FlexAL ALD System manual (login to LabRunr)
• Adixen 4 Series Multistage Roots dry pumps brochure
• NovaSafe exhaust abatement system manual
• Oxford Ozone Delivery module manual (login to LabRunr)
• Oxford FlexAl system drawings (login to LabRunr)

Specifications

System Features

• FlexAL ALD Process Module
• The chamber is electrically heated to 150 °C
• Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
• Precursor Multi-Bubbler Cabinet 6 Way
• Standard Gas Pod externally mounted (8 lines max)
• 4 each Standard gasline and MFC for non-toxic gases
• 3 each By-passed gasline and MFC for toxic gases
• Ozone delivery system for ALD with up to 22% w/w ozone concentration
• Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
• Chamber process pump Pfeiffer/Adixen A604H kit
• FlexAL compact single wafer load lock kit
• Load Lock dry pump kit
• PC & 19" monitor

System Specifications

• ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
• ALD 600 °C biasable Inconel electrode
• Heated 250 mTorr high resolution temperature compensated capacitance manometer
• ALD 100 mm pumping pipework plus 100 mm fast APC
• Process Acceptance criteria for thermal and plasma Al₂O₃ and TiO₂