The Dielectric Inductively Coupled Plasma - Reactive Ion Etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
Applications
Cryogenic etch of silicon
pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
Si, SixNy, SiO2
PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
