XeF2 Etcher for Silicon: Difference between revisions
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|RoomLocation = B235C Steele | |RoomLocation = B235C Steele | ||
|LabPhone = 626-395-1539 | |LabPhone = 626-395-1539 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Alex Wertheim]] | ||
|StaffEmail = | |StaffEmail = alexw@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-3371 | ||
|Manufacturer = N/A | |Manufacturer = N/A | ||
|Model = N/A | |Model = N/A |
Latest revision as of 18:42, 8 October 2025
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Description
The XeF2 etcher flows pressure- and time-controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication