EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions
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===== General SOPs ===== | ===== General SOPs ===== | ||
* [https://caltech.box.com/s/qzhf1h1su3a1vadl6p76mg6tav49uisn EBPG SOP] | * [https://caltech.box.com/s/qzhf1h1su3a1vadl6p76mg6tav49uisn EBPG SOP] | ||
* [https://caltech.box.com/s/jq0s85sdsd069cv9aesdfixy5fueihyh User's Guide to the EBPG pg computer desktop] | |||
* [https://caltech.box.com/s/9whswv26y0w6yua8073nw080r3lcfdz4 EBPG Troubleshooting Guide] | * [https://caltech.box.com/s/9whswv26y0w6yua8073nw080r3lcfdz4 EBPG Troubleshooting Guide] | ||
* [https://caltech.box.com/s/cwp88iw2q5t8eygl114zs8ywlhraxo16 EBPG reservation and use policy] | * [https://caltech.box.com/s/cwp88iw2q5t8eygl114zs8ywlhraxo16 EBPG reservation and use policy] | ||
Revision as of 16:07, 28 February 2020
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Description
The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
- EBPG SOP
- User's Guide to the EBPG pg computer desktop
- EBPG Troubleshooting Guide
- EBPG reservation and use policy
- EBPG Training presentation (Caltech-only access)
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG 5200 Piece part prep SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Adjust Aperture SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG 5200 Secondary Electron Detector SOP
- EBPG Holderfix SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5200 page)
Troubleshooting SOPs
- Information Archive Beam
- BEAMS $pg shutdown / coldstart SOP
- Beam file Recovery SOP
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
- EBPG FEG recovery and new beam table SOP
- Raith Common errors and solutions with aligned writing SOP
Data Preparation Resources
- SOP: KNI Introduction to Layout BEAMER
- App Note: 3D Surface Proximity Effect Correction
- App Note: Fracture Optimization
- App Note: Writing Time Optimization
- App Note: Formulas in Beamer Modules
- App Note: Multipass
- App Note: Mixed Export Options
- App Note: GPF Formatter
Lithography Process Information
- Bilayer PMMA Liftoff Procedure
- MAN Resist Data Sheet
- PMMA Resist Data Sheet
- SML Resist Data Sheet
- ZEP Resist Data Sheet
- ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)
- HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)
- Laurell Spinner cleaning SOP
Manufacturer Manuals
- EBPG 5200 system manual (Caltech-only access)
- Raith cjob manual (Caltech-only access)
- Layout Beamer Release Notes
- Layout Beamer Manual
- Laurell Spin Coater Manual (log into LabRunr and download Manual from EBPG 5000+ page)
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200 μm, 300 μm, 400 μm
Related Instrumentation in the KNI
Electron Beam Lithography
- EBPG 5200: 100 kV Electron Beam Lithography
- EBPG 5000+: 100 kV Electron Beam Lithography
- Quanta 200F: SEM with 1-30 kV Electron Beam Lithography
- Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography