EBPG 5000+: 100 kV Electron Beam Lithography

EBPG 5000+ Instrument Type Lithography Techniques Electron Beam Lithography Staff Manager Guy A. DeRose, PhD Staff Email derose@caltech.edu Staff Phone 626-395-3423 Reserve time on FBS Request training via FBS User Dashboard Lab Location B233C Steele Lab Phone 626-395-1531 & -1540 Manufacturer Raith Lithography BV Model EBPG 5000+

Description

The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).

Operational Applications

• Non-aligned electron beam lithography
• Aligned (aka direct-write) electron beam lithography

Scientific / Technical Applications

• Nanophotonics
• Nano-optics
• Waveguides

Resources

General SOPs

• EBPG SOP
• EBPG Troubleshooting Guide
• EBPG reservation and use policy
• EBPG Training presentation (Caltech-only access)

Sample Prep and Writing SOPs

• EBPG Preparing pieces for exposure on 5000+ SOP
• EBPG High Resolution Mode SOP
• EBPG Preparing sample for exposure SOP
• EBPG Beam Adjustment SOP
• EBPG Marker definition Procedure
• EBPG Adjust Aperture SOP
• EBPG JOY Marker Procedure
• EBPG Disable marker height check SOP
• EBPG Holderfix SOP
• EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5000+ page)

Troubleshooting SOPs

• Information Archive Beam
• BEAMS $pg shutdown / coldstart SOP
• Beam file Recovery SOP
• Lindgren MACS SOP
• EBPG Emergency air cylinder SOP
• EBPG Unlocking the stage SOP
• EBPG SAEHT not initialized SOP
• EBPG SAEHT no route to host recovery SOP
• EBPG hotbox slave communications fault recovery SOP
• EBPG FEG recovery and new beam table SOP

Data Preparation Resources

• App Note: 3D Surface Proximity Effect Correction
• App Note: Fracture Optimization
• App Note: Writing Time Optimization
• App Note: Formulas in Beamer Modules
• App Note: Multipass
• App Note: Mixed Export Options
• App Note: GPF Formatter

Lithography Process Information

• Bilayer PMMA Liftoff Procedure
• MAN Resist Data Sheet
• PMMA Resist Data Sheet
• SML Resist Data Sheet
• ZEP Resist Data Sheet
• ZEP 520A resist spinning procedure (Caltech-only access)
• Laurell Spinner cleaning SOP

Manufacturer Manuals

• Layout Beamer Release Notes
• Layout Beamer Manual
• Laurell Spin Coater Manual (log into LabRunr and download Manual from EBPG 5000+ page)

Specifications

Manufacturer Specifications and Manuals

• Raith cjob manual (Caltech-only access)
• Layout Beamer Release Notes
• Layout Beamer Manual

Specifications

• Voltage Range: 20, 50 or 100 kV
• Current Range: 50 pA to 200 nA
• Main Field Size: Up to 1 mm x 1 mm
• Main Field Resolution: 20 bit
• Maximum Writing Frequency: 100 MHz
• Aperture Sizes: 300μm, 300μm, 400μm

Related Instrumentation in the KNI

Electron Beam Lithography

• EBPG 5200: 100 kV Electron Beam Lithography
• EBPG 5000+: 100 kV Electron Beam Lithography
• Quanta 200F: SEM with 1-30 kV Electron Beam Lithography
• Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography

Ion Beam Lithography

• ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy