Tube Furnaces for Wet & Dry Processing: Difference between revisions
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(→Allowed Materials: added SiNx) |
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* Annealing | * Annealing | ||
===== Allowed Materials ===== | ===== Allowed Materials ===== | ||
* Silicon or sapphire that is completely free of metal or organic contamination | * Silicon, SiNx, or sapphire that is completely free of metal or organic contamination | ||
** Recommended to have undergone a standard RCA clean or similar beforehand | ** Recommended to have undergone a standard RCA clean or similar beforehand | ||
* No other sample material allowed | * No other sample material allowed | ||
* No metal or organic contamination | * No metal or organic contamination | ||
** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination | ** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination | ||
===== Gas List ===== | ===== Gas List ===== | ||
* Nitrogen | * Nitrogen |
Revision as of 23:45, 24 April 2023
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Description
The system is designed for processing up to one-hundred, 150 mm (6") silicon or sapphire wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
Applications
- Dry & Wet oxidation
- Annealing
Allowed Materials
- Silicon, SiNx, or sapphire that is completely free of metal or organic contamination
- Recommended to have undergone a standard RCA clean or similar beforehand
- No other sample material allowed
- No metal or organic contamination
- Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination
Gas List
- Nitrogen
- Oxygen
- Water Vapor (Tube 1)
Resources
Equipment Status
- LabRunr Equipment Status (Select Furnace1 or Furnace2 from the dropdown menu)