Rapid Thermal Processor: Difference between revisions
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|InstrumentName = Solaris Rapid Thermal Processor | |InstrumentName = Solaris Rapid Thermal Processor | ||
|HeaderColor = #F5A81C | |HeaderColor = #F5A81C | ||
|ImageOne = | |ImageOne = RTP.jpeg | ||
|ImageTwo = | |ImageTwo = | ||
|InstrumentType = [[Equipment_List#Metrology|Metrology]] | |InstrumentType = [[Equipment_List#Metrology|Metrology]] | ||
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|StaffEmail = alireza@caltech.edu | |StaffEmail = alireza@caltech.edu | ||
|StaffPhone = 626-395-3984 | |StaffPhone = 626-395-3984 | ||
|Manufacturer = | |Manufacturer = Surface science integration | ||
|Model = | |Model = Solaris 150 | ||
|Techniques = | |Techniques = Rapid Thermal Processing | ||
|RequestTraining = alireza@caltech.edu | |RequestTraining = alireza@caltech.edu | ||
|EmailList = kni-metrology | |EmailList = kni-metrology | ||
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}} | }} | ||
== Description == | == Description == | ||
The Solaris 150 is a manual loading Rapid Thermal Processor system that can process up to 6 inch substrates. The system is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying. | |||
===== Applications ===== | ===== Applications ===== | ||
* | *Temperature range from room temperature to 1200 degrees C. | ||
* Processing gasses available: | |||
**Nitrogen | |||
**Argon | |||
**Forming Gas (5% H2 in N2) | |||
== Resources == | == Resources == | ||
===== SOPs ===== | ===== SOPs ===== | ||
* [https://caltech.box.com/s/ | *[https://caltech.box.com/s/9less1mp9tg7xya8ugycnw11dhw0lnjf Solaris 150 – Rapid Thermal Processor -Short SOP] | ||
*[https://caltech.box.com/s/7uozrq6pmgkcr6l8u3qhnka9sgtgf3u9 Solaris 150 – Rapid Thermal Processor -Long SOP] | |||
===== Manuals ===== | |||
*[https://caltech.app.box.com/file/1237887943601 Solaris 150 - Rapid Thermal Processor Manual] | |||
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Latest revision as of 23:51, 23 August 2024
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Description
The Solaris 150 is a manual loading Rapid Thermal Processor system that can process up to 6 inch substrates. The system is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.
Applications
- Temperature range from room temperature to 1200 degrees C.
- Processing gasses available:
- Nitrogen
- Argon
- Forming Gas (5% H2 in N2)
Resources
SOPs
Manuals