Contact Mask Aligners: MA6 & MA6/BA6: Difference between revisions

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|RoomLocation = B217 Steele
|RoomLocation = B217 Steele
|LabPhone = 626-395-1535
|LabPhone = 626-395-1535
|PrimaryStaff = Alireza Ghaffari
|PrimaryStaff = Nathan S. Lee
|StaffEmail = ghaffari@caltech.edu
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-3984
|StaffPhone = 626-395-4386
|Manufacturer = Suss MicroTec
|Manufacturer = Suss MicroTec
|Model = MA6 & MA6/BA6
|Model = MA6 & MA6/BA6
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== Description ==
== Description ==
[[Image:Mask-Aligner_Suss-MicroTec-MA6.jpg|thumb|upright=1.12|Suss MicroTec model MA6 Mask Aligner (model MA6/BA6 is shown at the top of the infobox)]]
[[Image:Mask-Aligner_Suss-MicroTec-MA6.jpg|thumb|upright=1.12|Suss MicroTec model MA6 Mask Aligner (model MA6/BA6 is shown at the top of the infobox)]]
The contact mask aligner is a tool that enables front- and back-side alignment of photo masks to create structures as small as 500 nm on sample sizes up to 6 inches. These systems are ideally suited for rapid definition of sub-micron devices through contact printing, and enable the high-resolution alignment of several lithographic layers to define complex devices. They are typically used to define contacts and connections to the nanostructures that are defined using the KNI's other fabrication instruments (e.g. e-beam lithography). The MA6/BA6 is also configured to do bond aligning in support of the Suss Microtec SB6L Wafer Bonder.
The contact mask aligner is a tool that enables front- and back-side alignment of photo masks to create structures as small as 500 nm on sample sizes up to 6 inches. These systems are ideally suited for rapid definition of sub-micron devices through contact printing, and enable the high-resolution alignment of several lithographic layers to define complex devices. They are typically used to define contacts and connections to the nanostructures that are defined using the KNI's other fabrication instruments (e.g. e-beam lithography).
==== Suss1 MA6/BA6 Applications ====
==== Suss1 MA6/BA6 Applications ====
* Front Side Flood Exposure (no mask)
* Front Side Flood Exposure (no mask)
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* [https://caltech.box.com/s/e1b5co1cb4hwbu21ala3cnqt888tma7f Alignment Mark Suggestion Document]
* [https://caltech.box.com/s/e1b5co1cb4hwbu21ala3cnqt888tma7f Alignment Mark Suggestion Document]


==== Labrunr Reservation Rules:====
==== FBS Reservation Rules:====
{| class="wikitable"
{| class="wikitable"
|-
|-
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'''  For reservations that DO NOT follow the reservation policy, email the tool manager BEFORE scheduling.'''
'''  For reservations that DO NOT follow the reservation policy, email the tool manager BEFORE scheduling.'''
''  Your reservation can be cancelled at any time by the tool manager if it does not follow the tool reservation policy.''
''  Your reservation can be cancelled at any time by the tool manager if it does not follow the tool reservation policy.''
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Suss1 or Suss2 from the dropdown menu)


=== Optical Lithography Resources ===
=== Optical Lithography Resources ===
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* [[Wafer Stepper | i-Line Wafer Stepper: GCA model 6300]]
* [[Wafer Stepper | i-Line Wafer Stepper: GCA model 6300]]
* [[CNI-PV 2.1: Nano Imprint Lithography | Nano Imprint Lithography: NILT CNI-PV 2.1]]
* [[CNI-PV 2.1: Nano Imprint Lithography | Nano Imprint Lithography: NILT CNI-PV 2.1]]
* [[DWL-66: Direct-Write Laser System | Direct-Write Laser System: Heidelberg Instruments DWL-66]]
* [[Nanoscribe PPGT: Microscale 3D Printer | Two-Photon Lithography (aka Microscale 3D Printing): Nanoscribe Photonic Professional GT]]
* [[Nanoscribe PPGT: Microscale 3D Printer | Two-Photon Lithography (aka Microscale 3D Printing): Nanoscribe Photonic Professional GT]]
* [[Optical Lithography Resources]]
* [[Optical Lithography Resources]]
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* [[EBPG 5000+: 100 kV Electron Beam Lithography | EBPG 5000+: 100 kV Electron Beam Lithography]]
* [[EBPG 5000+: 100 kV Electron Beam Lithography | EBPG 5000+: 100 kV Electron Beam Lithography]]
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM with 1-30 kV Electron Beam Lithography]]
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM with 1-30 kV Electron Beam Lithography]]
* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography]]
=== Ion Beam Lithography ===
=== Ion Beam Lithography ===
* [[ORION NanoFab: Helium, Neon & Gallium FIB | ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy]]
* [[ORION NanoFab: Helium, Neon & Gallium FIB | ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy]]

Latest revision as of 20:51, 18 September 2026

Suss Contact Mask Aligner MA6/BA6
Instrument Type Lithography
Techniques Frontside Alignment,
Backside Alignment,
Flood exposure
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-4386
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B217 Steele
Lab Phone 626-395-1535
Manufacturer Suss MicroTec
Model MA6 & MA6/BA6

Description

Suss MicroTec model MA6 Mask Aligner (model MA6/BA6 is shown at the top of the infobox)

The contact mask aligner is a tool that enables front- and back-side alignment of photo masks to create structures as small as 500 nm on sample sizes up to 6 inches. These systems are ideally suited for rapid definition of sub-micron devices through contact printing, and enable the high-resolution alignment of several lithographic layers to define complex devices. They are typically used to define contacts and connections to the nanostructures that are defined using the KNI's other fabrication instruments (e.g. e-beam lithography).

Suss1 MA6/BA6 Applications

  • Front Side Flood Exposure (no mask)
  • Front Side Alignment & Exposure
  • Back Side Alignment with Front Side Exposure

Suss2 MA6 Applications

  • Front Side Alignment & Exposure
  • Back Side Alignment with Front Side Exposure

Resources

Manufacturer Specifications

  • Whole wafers 2” up to 6” can be loaded.
  • Samples pieces up to 6”x6” square can be loaded.
  • Samples up to 6mm thick can be loaded..
  • Exposure Resolution:
Soft Contact Mode = 1 - 2 um
Hard Contact Mode = 1 um
Soft Vacuum Contact Mode = 1 - 0.5 um
Vacuum Contact Mode = 0.4 - 0.5 um

Suss 1 Exposure Settings

  • Channel 1 is 365nm wavelength at 15 mW/cm2.
  • Channel 2 is 405nm wavelength at 25 mW/cm2.

Suss 2 Exposure Settings

  • Channel 1 is 365nm wavelength at 10 mW/cm2.
  • Channel 2 is 405nm wavelength at 15 mW/cm2.

SOPs & Troubleshooting

Manufacturer Manuals

FBS Reservation Rules:

Advanced Res (days) Limit per Res (hrs) Limit per week (hrs)
Weekday 7 4 12
Weeknight 7 6 18
Weekend 14 6 18

For reservations that DO NOT follow the reservation policy, email the tool manager BEFORE scheduling. Your reservation can be cancelled at any time by the tool manager if it does not follow the tool reservation policy.

Optical Lithography Resources

Process Recipes


Optical Lithography

Electron Beam Lithography

Ion Beam Lithography

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