Difference between revisions of "EBPG 5200: 100 kV Electron Beam Lithography"

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* [https://caltech.box.com/s/acjh5syhzh4zm55jp76ef2hrzkeo4htw SML Resist Data Sheet]
* [https://caltech.box.com/s/acjh5syhzh4zm55jp76ef2hrzkeo4htw SML Resist Data Sheet]
* [https://caltech.box.com/s/vfvq5l8apkzzefxiu6weexpt37xpx9os ZEP Resist Data Sheet]
* [https://caltech.box.com/s/vfvq5l8apkzzefxiu6weexpt37xpx9os ZEP Resist Data Sheet]
* [https://caltech.app.box.com/file/549582924881 ZEP 520A resist spinning, writing & development pricedure (Caltech-only access)]
* [https://caltech.app.box.com/file/549582924881 ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ resist spinning, writing & development pricedure (Caltech-only access)]
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/jsetuvrq4ec1alqvn25pz11kmtzuw8rc Laurell Spinner cleaning SOP]
* [https://caltech.box.com/s/jsetuvrq4ec1alqvn25pz11kmtzuw8rc Laurell Spinner cleaning SOP]

Revision as of 08:44, 22 January 2020

EBPG 5200
Wavelength-scale-Piezoelectric-Transducer Alp-Sipahigil.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on LabRunr
Request training by email
Lab Location B233C Steele
Lab Phone 626-395-1531 & -1540
Manufacturer Raith Lithography BV
Model EBPG 5200


The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).

Operational Applications
  • Non-aligned electron beam lithography
  • Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides


General SOPs
Sample Prep and Writing SOPs
Troubleshooting SOPs
Data Preparation Resources
Lithography Process Information
Manufacturer Manuals


  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA to 200 nA
  • Main Field Size: Up to 1 mm x 1 mm
  • Main Field Resolution: 20 bit
  • Maximum Writing Frequency: 100 MHz
  • Aperture Sizes: 200 μm, 300 μm, 400 μm

Related Instrumentation in the KNI

Electron Beam Lithography
Ion Beam Lithography