Difference between revisions of "EBPG 5000+: 100 kV Electron Beam Lithography"

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* [[EBPG 5000+: 100 kV Electron Beam Lithography | EBPG 5000+: 100 kV Electron Beam Lithography]]
* [[EBPG 5000+: 100 kV Electron Beam Lithography | EBPG 5000+: 100 kV Electron Beam Lithography]]
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM with 1-30 kV Electron Beam Lithography]]
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Quanta 200F: SEM with 1-30 kV Electron Beam Lithography]]
* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography]]
<!---* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Tecnai TF-20: TEM & STEM with 80-200 kV Electron Beam Lithography]]--->
 
===== Ion Beam Lithography =====
===== Ion Beam Lithography =====
* [[ORION NanoFab: Helium, Neon & Gallium FIB | ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy]]
* [[ORION NanoFab: Helium, Neon & Gallium FIB | ORION NanoFab: Helium (5-40 kV), Neon (5-35 kV) & Gallium (1-30 kV) Focused Ion Beam Lithography & Microscopy]]

Revision as of 20:56, 8 February 2022

EBPG 5000+
EBPG-5000+.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on LabRunr
Request training by email
Lab Location B233C Steele
Lab Phone 626-395-1531 & -1540
Manufacturer Raith Lithography BV
Model EBPG 5000+

Description

The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).

Operational Applications
  • Non-aligned electron beam lithography
  • Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

Equipment Data
General SOPs
Training materials
Sample Prep and Writing SOPs
Advanced Troubleshooting SOPs
Data Preparation Resources
Lithography Process Information
Manufacturer Manuals

Specifications

Manufacturer Specifications and Manuals
Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA to 200 nA
  • Main Field Size: Up to 1 mm x 1 mm
  • Main Field Resolution: 20 bit
  • Maximum Writing Frequency: 100 MHz
  • Aperture Sizes: 300μm, 300μm, 400μm



Related Instrumentation in the KNI

Electron Beam Lithography
Ion Beam Lithography