Difference between revisions of "DRIE: Bosch & Cryo ICP-RIE for Silicon"
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|StaffPhone = 626-395-1319 | |StaffPhone = 626-395-1319 | ||
|Manufacturer = Oxford Instruments | |Manufacturer = Oxford Instruments | ||
|Techniques = Bosch | |Techniques = Bosch & Cryogenic Etch of Silicon | ||
|EmailList = kni-oxfordicp | |EmailList = kni-oxfordicp | ||
|EmailListName = Oxford ICP | |EmailListName = Oxford ICP | ||
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}} | }} | ||
== Description == | == Description == | ||
The MEMS / Bosch / Cryo | The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasmalab System 100 ICP-RIE that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with C<sub>4</sub>F<sub>8</sub> and SF<sub>6</sub> gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 μm/min. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF<sub>6</sub> and O<sub>2</sub> if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only. | ||
===== Applications ===== | ===== Applications ===== | ||
* Deep silicon etch using Bosch process | * Deep silicon etch using Bosch process | ||
* Cryogenic etch of silicon | * Cryogenic etch of silicon | ||
* pseudo-Bosch of silicon | * pseudo-Bosch etch of silicon | ||
===== Allowed material in DRIE ===== | ===== Allowed material in DRIE ===== | ||
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge | * Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge | ||
* PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks | * PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks | ||
* Buried/backside metal ok if never exposed (not an etch stop) | * Buried/backside metal ok if never exposed (not an etch stop) | ||
===== DRIE Gas List ===== | ===== DRIE Gas List ===== | ||
* SF<sub>6</sub> | * SF<sub>6</sub> | ||
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* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | * [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | ||
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | * [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | ||
===== Process Documents ===== | ===== Process Documents ===== | ||
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards] | * [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards] | ||
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* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch] | * [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch] | ||
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | * [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | ||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual] | * [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual] | ||
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===== Manufacturer Specifications ===== | ===== Manufacturer Specifications ===== | ||
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration] | * [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration] | ||
===== System Features ===== | ===== System Features ===== | ||
* Universal base console | * Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump | ||
* PC 2000 Operating system | * PC 2000 Operating system | ||
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer | * ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer | ||
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* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control | * 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control | ||
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF<sub>6</sub>, and C<sub>4</sub>F<sub>8</sub>) | * Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF<sub>6</sub>, and C<sub>4</sub>F<sub>8</sub>) | ||
* Six line gas pod with | * Six line gas pod with three non-toxic digital mass-flow-controlled gas lines | ||
* Alcatel 1300 l/s MAGLEV turbo pump | * Alcatel 1300 l/s MAGLEV turbo pump | ||
* Single-wafer automatic insertion load lock with soft pump option | * Single-wafer automatic insertion load lock with soft pump option | ||
* Single user license for Anisotropic Silicon Etch Process (Bosch) | * Single user license for Anisotropic Silicon Etch Process (Bosch) | ||
===== System Specifications ===== | ===== System Specifications ===== | ||
* Chamber wall heating 80 deg C | * Chamber wall heating 80 °:C | ||
* Cryo table range -150 to 400 deg C | * Cryo table range: -150 to 400 °:C | ||
* ICP | * ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source | ||
* Substrate bias control by 30 / 300W RIE source | * Substrate bias control by 30 / 300W RIE source | ||
* Helium back-side wafer cooling | * Helium back-side wafer cooling | ||
Revision as of 20:44, 27 May 2019
|
Description
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasmalab System 100 ICP-RIE that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with C4F8 and SF6 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 μm/min. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
Applications
- Deep silicon etch using Bosch process
- Cryogenic etch of silicon
- pseudo-Bosch etch of silicon
Allowed material in DRIE
- Si, SixNy, SiO2, Ge
- PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
- Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
- SF6
- C4F8
- O2
- Ar
- N2
Resources
SOPs & Troubleshooting
Process Documents
- Process Standards
- Silicon Waveguide Etch
- Bosch Si Etch
- High-Rate Bosch Si Etch
- Cryo-Si Etch
- Isotropic Si Etch
- Etch chamber cleaning recipes
Manufacturer Manuals
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
- Variable height 240 mm Cryo RIE electrode
- Parameter ramping software
- 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
- 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
- Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
- Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
- Alcatel 1300 l/s MAGLEV turbo pump
- Single-wafer automatic insertion load lock with soft pump option
- Single user license for Anisotropic Silicon Etch Process (Bosch)
System Specifications
- Chamber wall heating 80 °:C
- Cryo table range: -150 to 400 °:C
- ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
- Substrate bias control by 30 / 300W RIE source
- Helium back-side wafer cooling