Difference between revisions of "DRIE: Bosch & Cryo ICP-RIE for Silicon"

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|StaffPhone = 626-395-1319
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Manufacturer = Oxford Instruments
|Techniques = Bosch, Cryogenic etch of silicon
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList =  kni-oxfordicp
|EmailList =  kni-oxfordicp
|EmailListName = Oxford ICP
|EmailListName = Oxford ICP
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}}
}}
== Description ==
== Description ==
The MEMS / Bosch / Cryo Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) is is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive ion etching (DRIE) via the Bosch process, allowing silicon etching with C<sub>4</sub>F<sub>8</sub> and SF<sub>6</sub> gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 micrometers/minute. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF<sub>6</sub> and O<sub>2</sub> if needed. This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon only.  
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasmalab System 100 ICP-RIE that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with C<sub>4</sub>F<sub>8</sub> and SF<sub>6</sub> gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 &mu;m/min. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF<sub>6</sub> and O<sub>2</sub> if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.  
===== Applications =====
===== Applications =====
* Deep silicon etch using Bosch process
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
* pseudo-Bosch etch of silicon
 
===== Allowed material in DRIE =====
===== Allowed material in DRIE =====
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks
* PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
===== DRIE Gas List =====
* SF<sub>6</sub>
* SF<sub>6</sub>
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* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
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* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
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===== Manufacturer Specifications =====
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system  
* PC 2000 Operating system  
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
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* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF<sub>6</sub>, and C<sub>4</sub>F<sub>8</sub>)
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF<sub>6</sub>, and C<sub>4</sub>F<sub>8</sub>)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV  turbo pump
* Alcatel 1300 l/s MAGLEV  turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
===== System Specifications =====
* Chamber wall heating 80 deg C
* Chamber wall heating 80 &deg:C
* Cryo table range -150 to 400 deg C
* Cryo table range: -150 to 400 &deg:C
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling
* Helium back-side wafer cooling

Revision as of 20:44, 27 May 2019

DRIE
Silicon-Microcones Paul-A-Kempler.jpg
Instrument Type Etching
Techniques Bosch & Cryogenic Etch of Silicon
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
Sign up for Oxford ICP email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model Plasmalab System 100
DRIE Bosch-and-Cryo ICP–RIE.jpg

Description

The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasmalab System 100 ICP-RIE that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with C4F8 and SF6 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 μm/min. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.

Applications
  • Deep silicon etch using Bosch process
  • Cryogenic etch of silicon
  • pseudo-Bosch etch of silicon
Allowed material in DRIE
  • Si, SixNy, SiO2, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2

Resources

SOPs & Troubleshooting
Process Documents
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PC 2000 Operating system
  • ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • Variable height 240 mm Cryo RIE electrode
  • Parameter ramping software
  • 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
  • Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
  • Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
  • Alcatel 1300 l/s MAGLEV turbo pump
  • Single-wafer automatic insertion load lock with soft pump option
  • Single user license for Anisotropic Silicon Etch Process (Bosch)
System Specifications
  • Chamber wall heating 80 &deg:C
  • Cryo table range: -150 to 400 &deg:C
  • ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
  • Substrate bias control by 30 / 300W RIE source
  • Helium back-side wafer cooling