FlexAL II: Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) Instrument Type Deposition Techniques Atomic Layer Deposition of Oxides and Nitrides Staff Manager Nathan S. Lee Staff Email nathslee@caltech.edu Staff Phone 626-395-1319 Reserve time on FBS Request training via FBS User Dashboard Lab Location B235 Steele Lab Phone 626-395-1532 Manufacturer Oxford Instruments Model FlexAL II

Description

The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600°C, and substrate sizes up to 6 inches (150mm). There is an Inductively-Coupled Plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursors to grow a variety of high-purity oxides and nitrides.

Applications

• Aluminum oxide and nitride deposition
• Silicon dioxide and nitride deposition
• Titanium oxide and nitride deposition
• Hafnium oxide deposition
• Niobium oxide and nitride deposition
• Other films upon request

Allowed material in ALD System

• Si, Si_xN_y, SiO₂, SOI
• hard masks compatible with process temperature

ALD Gas List

• SF₆
• N₂
• O₂
• O₃
• NH₃
• H₂
• Ar

ALD Precursor List

• TMA (aluminum)
• TDMAT (titanium)
• BTBAS (silicon)
• TDMAH (hafnium)
• TBTDEN (niobium)
• Others upon request

Resources

SOPs & Troubleshooting

• General SOP
• Etcher toxic gas handling SOP
• Power Up Oxford ICP-RIE SOP
• Gas Status Board SOP

Process Documents

• Oxford Instruments ALD Materials Example Guide
• Oxford Instruments ALD gases and precursors
• Oxford Instruments ALD Process Acceptance report
• Oxford Instruments ALD Process Information guidance

Manufacturer Manuals

• Oxford FlexAL ALD System manual
• Adixen 4 Series Multistage Roots dry pumps brochure
• NovaSafe exhaust abatement system manual
• Oxford Ozone Delivery module manual
• Oxford FlexAl system drawings

Specifications

Manufacturer Specifications

• Manufacturer Data Sheet

System Features

• FlexAL ALD Process Module
• The chamber is electrically heated to 150 deg C
• Two ports at 70 degree angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
• Precursor Multi-Bubbler Cabinet 6 Way
• Standard Gas Pod externally mounted (8 lines max)
• 4 each Standard gasline and MFC for non-toxic gases
• 3 each By-passed gasline and MFC for toxic gases
• Ozone delivery system for ALD with up to 22% w/w ozone concentration
• Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
• Chamber process pump Pfeiffer/Adixen A604H kit
• FlexAL compact single wafer load lock kit
• Load Lock dry pump kit
• PC & 19" monitor

System Specifications

• ICP 65 plasma source with 600W 13.56 MHz RF Generator & AMU
• ALD 600°C biasable Inconel electrode
• Heated 250 mTorr high resolution temperature compensated capacitance manometer
• ALD 100 mm pumping pipework plus 100 mm fast APC
• Process Acceptance criteria for thermal and plasma Al₂O₃ and TiO₂