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The MEMS / Bosch / Cryo Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) is is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive ion etching (DRIE) via the Bosch process, allowing silicon etching with C4F8 and SF6 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 micrometers/minute. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon only.
Applications
Deep silicon etch using Bosch process
Cryogenic etch of silicon
pseudo-Bosch of silicon
Allowed material in DRIE
Si, SixNy, SiO2, Ge
PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
Buried/backside metal ok if never exposed (not an etch stop)
