EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions
Jump to navigation
Jump to search
| Line 36: | Line 36: | ||
* [https://caltech.box.com/s/vpkguvtrdw9eup3rytljb5re9rfbe1fb EBPG 5200 Piece part prep SOP] | * [https://caltech.box.com/s/vpkguvtrdw9eup3rytljb5re9rfbe1fb EBPG 5200 Piece part prep SOP] | ||
* [https://caltech.box.com/s/6yp4eq33y84y12hon075sbh1t7uukvay EBPG Preparing sample for exposure SOP] | * [https://caltech.box.com/s/6yp4eq33y84y12hon075sbh1t7uukvay EBPG Preparing sample for exposure SOP] | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/c5gz16zs97vcsnlayr5kj7zffnv9mq81 EBPG Beam Adjustment SOP] | ||
* [https://caltech.box.com/s/uoeq30e8bxh8r3dza33ju4sid5qycg8z EBPG Marker definition Procedure] | * [https://caltech.box.com/s/uoeq30e8bxh8r3dza33ju4sid5qycg8z EBPG Marker definition Procedure] | ||
* [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | * [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | ||
Revision as of 21:34, 29 August 2019
|
Description
The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG 5200 Piece part prep SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG 5200 Secondary Electron Detector SOP
- EBPG Holderfix SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5200 page)
Troubleshooting SOPs
- Information Archive Beam
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
- EBPG FEG recovery and new beam table SOP
Data Preparation Resources
- App Note: 3D Surface Proximity Effect Correction
- App Note: Fracture Optimization
- App Note: Writing Time Optimization
- App Note: Formulas in Beamer Modules
- App Note: Multipass
- App Note: Mixed Export Options
- App Note: GPF Formatter
Lithography Process Information
- Bilayer PMMA Liftoff Procedure
- MAN Resist Data Sheet
- PMMA Resist Data Sheet
- SML Resist Data Sheet
- ZEP Resist Data Sheet
Manufacturer Manuals
- Layout Beamer Release Notes
- Layout Beamer Manual
- Laurell Spin Coater Manual (log into LabRunr and download Manual from EBPG 5000+ page)
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200 μm, 300 μm, 400 μm