EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions
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* [https://caltech.box.com/s/yh1ku02vjnf3ew8uvmjbyn8hv5t0em72 App Note: Mixed Export Options] | * [https://caltech.box.com/s/yh1ku02vjnf3ew8uvmjbyn8hv5t0em72 App Note: Mixed Export Options] | ||
* [https://caltech.box.com/s/9wbovly55qu2plfmoian6a7ocbw7pk2h App Note: GPF Formatter] | * [https://caltech.box.com/s/9wbovly55qu2plfmoian6a7ocbw7pk2h App Note: GPF Formatter] | ||
===== Lithography Process Information ===== | |||
* [https://caltech.box.com/s/tfg34i85sknxsrqqbrjtszmd0fqhgnt1 Bilayer PMMA Liftoff Procedure] | |||
* [https://caltech.box.com/s/2pumpha7ywa8zenvfzjxlggglvm4u3h5 MAN Resist Data Sheet] | |||
* [https://caltech.box.com/s/lw2h56h0lqabwo82yofu52dqgi61gcp9 PMMA Resist Data Sheet] | |||
* [https://caltech.box.com/s/acjh5syhzh4zm55jp76ef2hrzkeo4htw SML Resist Data Sheet] | |||
* [https://caltech.box.com/s/vfvq5l8apkzzefxiu6weexpt37xpx9os ZEP Resist Data Sheet] | |||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https://caltech.box.com/s/gvgy6vpty5g33qvf9pdef629770vmjiw Layout Beamer Release Notes] | * [https://caltech.box.com/s/gvgy6vpty5g33qvf9pdef629770vmjiw Layout Beamer Release Notes] | ||
* [https://caltech.box.com/s/6047un2cme4wwgs9ztvexjelp5x7e79p Layout Beamer Manual] | * [https://caltech.box.com/s/6047un2cme4wwgs9ztvexjelp5x7e79p Layout Beamer Manual] | ||
== Specifications == | == Specifications == | ||
* Voltage Range: 20, 50 or 100 kV | * Voltage Range: 20, 50 or 100 kV | ||
Revision as of 15:28, 5 June 2019
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Description
The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG 5200 Piece part prep SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG 5200 Secondary Electron Detector SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5200 page)
Troubleshooting SOPs
- Information Archive Beam
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
- EBPG FEG recovery and new beam table SOP
Data Preparation Resources
- App Note: 3D Surface Proximity Effect Correction
- App Note: Fracture Optimization
- App Note: Writing Time Optimization
- App Note: Formulas in Beamer Modules
- App Note: Multipass
- App Note: Mixed Export Options
- App Note: GPF Formatter
Lithography Process Information
- Bilayer PMMA Liftoff Procedure
- MAN Resist Data Sheet
- PMMA Resist Data Sheet
- SML Resist Data Sheet
- ZEP Resist Data Sheet
Manufacturer Manuals
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200 μm, 300 μm, 400 μm