EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions
Jump to navigation
Jump to search
mNo edit summary |
|||
| Line 49: | Line 49: | ||
* [https://caltech.box.com/s/e9jsz2kisfzjsyeomqr5gmjj3fc0nifx EBPG Unlocking the stage SOP] | * [https://caltech.box.com/s/e9jsz2kisfzjsyeomqr5gmjj3fc0nifx EBPG Unlocking the stage SOP] | ||
* [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT not initialized SOP] | * [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT not initialized SOP] | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/lsrjqc5n6pwqpc4al8qxaxq03k21y38i EBPG SAEHT no route to host recovery SOP] | ||
* [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] | * [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] | ||
* [https://caltech.box.com/s/emfc1i4qeg9psatj6enpm9g38f5a2u9r EBPG FEG recovery and new beam table SOP] | |||
===== Data Preparation Resources ===== | ===== Data Preparation Resources ===== | ||
Revision as of 21:39, 31 May 2019
|
Description
The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35 mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200 mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG 5200 Piece part prep SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG 5200 Secondary Electron Detector SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5200 page)
Troubleshooting SOPs
- Information Archive Beam
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
- EBPG FEG recovery and new beam table SOP
Data Preparation Resources
- App Note: 3D Surface Proximity Effect Correction
- App Note: Fracture Optimization
- App Note: Writing Time Optimization
- App Note: Formulas in Beamer Modules
- App Note: Multipass
- App Note: Mixed Export Options
- App Note: GPF Formatter
Manufacturer Manuals
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200 μm, 300 μm, 400 μm