ICP-RIE: Dielectric Etcher: Difference between revisions
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|StaffPhone = 626-395-1319 | |StaffPhone = 626-395-1319 | ||
|Manufacturer = Oxford Instruments | |Manufacturer = Oxford Instruments | ||
|Techniques = | |Techniques = Dielectric Material Etching | ||
|EmailList = kni-oxfordicp | |EmailList = kni-oxfordicp | ||
|EmailListName = Oxford ICP | |EmailListName = Oxford ICP | ||
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== Description == | == Description == | ||
The Dielectric | The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C<sub>4</sub>F<sub>8</sub> and SF<sub>6</sub> gases, and cryogenic silicon etch with SF<sub>6</sub> and O<sub>2</sub>. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only. | ||
===== Applications ===== | ===== Applications ===== | ||
* Cryogenic etch of silicon | * Cryogenic etch of silicon | ||
* pseudo-Bosch of silicon | * pseudo-Bosch of silicon | ||
===== Allowed material in Dielectric Etch System ===== | ===== Allowed material in Dielectric Etch System ===== | ||
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub> | * Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub> | ||
* PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks | * PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> hard masks | ||
* No metals | * No metals | ||
===== Dielectric Etcher Gas List ===== | ===== Dielectric Etcher Gas List ===== | ||
* SF<sub>6</sub> | * SF<sub>6</sub> | ||
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* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | * [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | ||
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | * [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | ||
===== Process Documents ===== | ===== Process Documents ===== | ||
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards] | * [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards] | ||
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* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch] | * [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch] | ||
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | * [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | ||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 Dielectric Etcher Manual] | * [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 Dielectric Etcher Manual] | ||
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===== Manufacturer Specifications ===== | ===== Manufacturer Specifications ===== | ||
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration] | * [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration] | ||
===== System Features ===== | ===== System Features ===== | ||
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump | * Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump | ||
* PC 2000 Operating system | * PC 2000 Operating system | ||
* ICP process chamber with | * ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer | ||
* Variable height | * Variable height 240 mm Cryo RIE electrode | ||
* Parameter ramping software (Not Bosch) | * Parameter ramping software (Not Bosch) | ||
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement | * 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement | ||
* | * 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control | ||
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines | * Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines | ||
* Chamber Gas ring, with split gas manifold | * Chamber Gas ring, with split gas manifold | ||
* Alcatel 1300 l/s MAGLEV turbo pump | * Alcatel 1300 l/s MAGLEV turbo pump | ||
* Single-wafer automatic insertion load lock with soft pump option | * Single-wafer automatic insertion load lock with soft pump option | ||
===== System Specifications ===== | ===== System Specifications ===== | ||
* Chamber wall heating 80 deg C | * Chamber wall heating 80 °C | ||
* Cryo table range -140 to 400 deg C | * Cryo table range -140 to 400 °C | ||
* ICP | * ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source. | ||
* Substrate bias control by 30 / | * Substrate bias control by 30 / 300 W RIE source | ||
* Helium back-side wafer cooling | * Helium back-side wafer cooling | ||
Revision as of 21:01, 27 May 2019
|
Description
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
Applications
- Cryogenic etch of silicon
- pseudo-Bosch of silicon
Allowed material in Dielectric Etch System
- Si, SixNy, SiO2
- PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
- No metals
Dielectric Etcher Gas List
- SF6
- C4F8
- O2
- Ar
- N2
- CHF3
- N2O
- NH3
Resources
SOPs & Troubleshooting
Process Documents
- Process Standards
- Silicon Waveguide Etch
- Silicon Nitride etch
- Hard Mask Oxide Etch
- Cryo-Si Etch
- Etch chamber cleaning recipes
Manufacturer Manuals
- Oxford Plasmalab System 100 Dielectric Etcher Manual
- Edwards Pyrophoric Conditioning System Manual
- Edwards QDP 80 dry vacuum pump Manual
Specifications
Manufacturer Specifications
System Features
- Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
- Variable height 240 mm Cryo RIE electrode
- Parameter ramping software (Not Bosch)
- 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
- 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
- Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
- Chamber Gas ring, with split gas manifold
- Alcatel 1300 l/s MAGLEV turbo pump
- Single-wafer automatic insertion load lock with soft pump option
System Specifications
- Chamber wall heating 80 °C
- Cryo table range -140 to 400 °C
- ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
- Substrate bias control by 30 / 300 W RIE source
- Helium back-side wafer cooling