EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions
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* [https://caltech.box.com/s/ys4qbxnsqfqbrdo4dm7t48z1z9dljuwi EBPG High Resolution Mode SOP] | * [https://caltech.box.com/s/ys4qbxnsqfqbrdo4dm7t48z1z9dljuwi EBPG High Resolution Mode SOP] | ||
* [https://caltech.box.com/s/vpkguvtrdw9eup3rytljb5re9rfbe1fb EBPG 5200 Piece part prep SOP] | * [https://caltech.box.com/s/vpkguvtrdw9eup3rytljb5re9rfbe1fb EBPG 5200 Piece part prep SOP] | ||
* [https://caltech.box.com/s/6yp4eq33y84y12hon075sbh1t7uukvay EBPG Preparing sample for exposure SOP] | |||
* [https://caltech.box.com/s/l42cjo7q7ughvvkqm8r6i4jzscq4lihe EBPG Beam Adjustment SOP] | |||
* [https://caltech.box.com/s/31qwx2yq8hisxgvelrsbpap3g4pgpcjl EBPG Marker definition Procedure] | * [https://caltech.box.com/s/31qwx2yq8hisxgvelrsbpap3g4pgpcjl EBPG Marker definition Procedure] | ||
* [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | * [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | ||
* [https://caltech.box.com/s/6mqfko3fswi0rwrt8zfaj8nwjfr9v2c7 EBPG Disable marker height check SOP] | * [https://caltech.box.com/s/6mqfko3fswi0rwrt8zfaj8nwjfr9v2c7 EBPG Disable marker height check SOP] | ||
* [https://labrunr.caltech.edu/Equipment_2.aspx EBPG Remote Access SOP] | * [https://labrunr.caltech.edu/Equipment_2.aspx EBPG Remote Access SOP] | ||
===== Troubleshooting SOPs ===== | ===== Troubleshooting SOPs ===== | ||
* [https://caltech.box.com/s/sz9pai0icsntnef6me23veiwtwdui0gm Troubleshooting Guide] | * [https://caltech.box.com/s/sz9pai0icsntnef6me23veiwtwdui0gm Troubleshooting Guide] |
Revision as of 22:36, 13 May 2019
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Description
The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.
Opertional Applications
- Non-aligned electron beam lithography
- Aligned (AKA direct-write) electron beam lithography
Scientific / technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
SOPs & Troubleshooting
- EBPG SOP Type (Short Version | Long Version)
- EBPG reservation and use policy
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG 5200 Piece part prep SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG Remote Access SOP
Troubleshooting SOPs
- Troubleshooting Guide
- Information Archive Beam
- Lindgren MACS SOP
- SAEHT not initialized SOP
- EBPG Emergency air cylinder SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals
Specifications
Manufacturer Specifications
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA - >200 nA
- Main Field size: Up to 1mm x 1mm
- Main Field resolution: 20 bit
- Maximum writing frequency: 100 MHz
- Aperture Sizes: 200um, 300um, 400um
- etc.