EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions

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== Description ==
== Description ==
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The Raith EBPG 5200 is a direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.
===== Type1 Applications =====
===== Type1 Applications =====
* Application1
* Application1
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===== Manufacturer Specifications =====
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Manufacturuer Data Sheet]
* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Manufacturuer Data Sheet]
===== Mode 1 Specifications =====
===== Specifications =====
* Voltage Range: 0.5 to 30.0 kV
* Voltage Range: 20, 50 or 100 kV
* Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
* Current Range: 50 pA - >200 nA
* Main Field size: Up to 1mm x 1mm
* Main Field resolution: 20 bit
* Maximum writing frequency: 100 MHz
* Aperture Sizes: 200um, 300um, 400um
* etc.
* etc.
===== Mode 2 Specifications =====
===== Mode 2 Specifications =====
* Voltage Range: 5.0 to 30.0 kV
* Voltage Range: 20, 50 or 100 kV
* Current Range: 10 pA - 20 nA
* Current Range: 50 pA - >200 nA
* etc.
* etc.

Revision as of 17:45, 30 April 2019

EBPG 5200
File:EBPG-5200-Research-Image.jpg
Instrument Type Lithography
Techniques Technique One, Technique Two
Technique Three, Technique Four
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B233B Steele
Lab Phone 626-395-1531
Manufacturer Raith
Model {{{Model}}}
EBPG-5200-Instrument-Image.jpg

Description

The Raith EBPG 5200 is a direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.

Type1 Applications
  • Application1
  • Application2
  • Application3
Type2 Applications
  • Application1
  • Application2
  • Application3

Resources

SOPs & Troubleshooting
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals

Specifications

Manufacturer Specifications
Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA - >200 nA
  • Main Field size: Up to 1mm x 1mm
  • Main Field resolution: 20 bit
  • Maximum writing frequency: 100 MHz
  • Aperture Sizes: 200um, 300um, 400um
  • etc.
Mode 2 Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA - >200 nA
  • etc.
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