XeF2 Etcher for Silicon: Difference between revisions
Jump to navigation
Jump to search
m (Adjusted text to refer to FBS instead of LabRunr, and removed link to Equipment Status under Resources since the status can be viewed directly by users in FBS, per Tiffany 4/15/24 sg) |
No edit summary |
||
| (One intermediate revision by one other user not shown) | |||
| Line 7: | Line 7: | ||
|RoomLocation = B235C Steele | |RoomLocation = B235C Steele | ||
|LabPhone = 626-395-1539 | |LabPhone = 626-395-1539 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Alex Wertheim]] | ||
|StaffEmail = | |StaffEmail = alexw@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-3371 | ||
|Manufacturer = N/A | |Manufacturer = N/A | ||
|Model = N/A | |Model = N/A | ||
|Techniques = Selective dry Si etching | |Techniques = Selective dry Si etching | ||
|RequestTraining = | |RequestTraining = kmmckenz@caltech.edu | ||
|EmailList = kni-XeF2 | |EmailList = kni-XeF2 | ||
|EmailListName = XeF<sub>2</sub> | |EmailListName = XeF<sub>2</sub> | ||
Latest revision as of 18:42, 8 October 2025
|
Description
The XeF2 etcher flows pressure- and time-controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication