Latest revision as of 06:19, 22 January 2025

Sample Cleaning Resources

Solvent Cleans

UIUC Wafer Cleaning Procedure

Acetone, IPA -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
Acetone, Methanol -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
Acetone, Methanol, IPA
Acetone, Methanol, IPA, DI Water
Remover PG (60°C), IPA -Caution, low flashpoint, do not leave unattended
- Nano Remover PG Spec Sheet
- Columbia University Remover PG Process
Dichloromethane, IPA -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice

Etching Cleans

Caution. All of these processes require a buddy and adequate chemical safety training.

RCA Clean

Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.

https://en.wikipedia.org/wiki/RCA_clean

Nanostrip Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

Nanostrip (60°C) -Rinse with DI
- https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm
- https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf

Piranha Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

Caltech MMRC Piranha Etch

UMich LNF Piranha Etch

McMaster University Piranha Etch

Boston University Piranha Etch

HF Dip

Removes native oxide from surfaces.

UCI Irvine HF 2% Dip

UBC BOE Etch and HF Dip

Plasma Cleans

Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.

Wet Etching Resources

Reference Articles and Texts

Etch Rates for Micromachining Processing

Etch Rates for Micromachining Processing-Part II

Handbook of Metal Etchants

External Laboratories

BYU Etching list

UMich Wet Etching info

BYU Etching Guidance

UCSB Wet Etching Recipes

Berkeley Marvell Nanofab Process Manual

BYU KOH processing

UC Irvine KOH Etching

U Alberta KOH Etching

Commercial Materials

Transene Etch Compatibility Chart

Transene Etchant List

MicroChemicals trove of application notes

KNI Wet Etch Recipes Table

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Origin and Notes
KNI CHA Al	Al Etch Type A	X	-	Al	Good	Matches Transene's expected rate
KNI CHA Al	Al Etch Type D	X	-	Al	High	Matches Transene's expected rate
KNI CHA Al₂O₃	Phosphoric Acid	X	-	-	-	Measured 11/19 by
KNI Tystar Furnace 1000°C SiO₂	HF	111	Very Low	SiO₂	High	Measured 11/19 by Alex Wertheim
KNI PECVD 350°C SiO₂	HF	486	Low	SiO₂	High	Measured 11/19 by Alex Wertheim
KNI PECVD 200°C SiO₂	HF	1398	High	SiO₂	High	Measured 11/19 by Alex Wertheim
KNI PECVD 350°C Si₃N₄	Phosphoric Acid	X	-	-	-	Measured 11/19 by
KNI PECVD a-Si	KOH	X	High	Si	High	Link here to KNI member's research paper

Other Procedures

Liftoff

UCSB liftoff guidance

Stanford SNF liftoff procedures

Electroplating

Technic electroplating materials supplier

Safety Resources

KNI Lab Rules & Safety

BYU Acid Safety, HF Safety, Solvent Safety

@@ Line 1: / Line 1: @@
-{{NOINDEX|visible=no}}
+=Sample Cleaning Resources=
-cleaning procedures links, breakout
+*[https://www.sciencedirect.com/book/9780323510844/handbook-of-silicon-wafer-cleaning-technology#book-description Handbook of Silicon Wafer Cleaning Technology]
-=Sample Cleaning Resources=
+*[https://www.microsi.com/silicon-wafer-cleaning/ UC Irvine Cleaning Procedures for Silicon]
+*[https://cleanroom.byu.edu/clean BYU Substrate Cleaning Guide]
-https://cleanroom.byu.edu/clean
+*https://www.microsi.com/silicon-wafer-cleaning/
 ==Solvent Cleans==
+*[https://www-s.mechse.uiuc.edu/cleanroom/files/Procedures/Process/Wafer%20Cleaning%20Procedure%20V1.0.pdf UIUC Wafer Cleaning Procedure]
+*'''Acetone, IPA''' -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
+*'''Acetone, Methanol''' -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
+*'''Acetone, Methanol, IPA'''
+*'''Acetone, Methanol, IPA, DI Water'''
+*'''Remover PG (60°C), IPA''' -Caution, low flashpoint, do not leave unattended
+**Nano Remover PG Spec Sheet
+**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process]
+*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice
 ==Etching Cleans==
-===RCA-1===
+Caution.  All of these processes require a buddy and adequate chemical safety training.
+===RCA Clean===
+Prepares wafers for high-temperature processing steps.  Standardized protocol developed by RCA in 1960s.
+*https://en.wikipedia.org/wiki/RCA_clean
+===Nanostrip Etch===
+Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
+*'''Nanostrip (60°C)''' -Rinse with DI
+**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm
+**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf
 ===Piranha Etch===
+Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
+*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch]
+*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch]
+*[https://www.chemistry.mcmaster.ca/moran-mirabal/resources/PIRANHA-CLEAN-5-2014.pdf McMaster University Piranha Etch]
+*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch]
 ===HF Dip===
+Removes native oxide from surfaces.
+*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-hf-2-percent-dip.pdf UCI Irvine HF 2% Dip]
+*[http://www.nanofab.ubc.ca/processes/cleaning/boe-buffered-oxide-etch-and-hf-dip/ UBC BOE Etch and HF Dip]
 ==Plasma Cleans==
+Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes.  More information can be found on the tool page for the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Tergeo Plus Plasma Cleaner.]]
 =Wet Etching Resources=
-BYU Etch list
+==Reference Articles and Texts==
-https://cleanroom.byu.edu/wet_etch
-find etch list book and other links
+*[http://ieeexplore.ieee.org/abstract/document/546406/ Etch Rates for Micromachining Processing]
-http://transene.com/etch-compatibility/
-Etch rates for micromachining processing
+*[https://ieeexplore.ieee.org/document/1257354 Etch Rates for Micromachining Processing-Part II]
-http://ieeexplore.ieee.org/abstract/document/546406/
-Etch rates for micromachining processing-Part II
+*[https://vector.umd.edu/images/links/Handbook_of_Metal_Etchants.pdf Handbook of Metal Etchants]
-https://ieeexplore.ieee.org/document/1257354
-UMich wet etch info
+==External Laboratories==
-http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching
-BYU Transene Wet Etch
+*[https://cleanroom.byu.edu/wet_etch BYU Etching list]
-https://transene.com/etchants/
-KOH, also find alternative:
+*[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich Wet Etching info]
-https://cleanroom.byu.edu/KOH
-BYU etching guidance:
+*[https://cleanroom.byu.edu/wet_etch BYU Etching Guidance]
-https://cleanroom.byu.edu/chemical_etching.html
-==KNI Wet Etch Recipes Table==
+*[https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes UCSB Wet Etching Recipes]
+*[https://nanolab.berkeley.edu/public/manuals/process_manual.shtml Berkeley Marvell Nanofab Process Manual]
+*[https://cleanroom.byu.edu/KOH BYU KOH processing]
+*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-anisotropic-si-etch-using-koh.pdf UC Irvine KOH Etching]
+*[https://www.nanofab.ualberta.ca/wp-content/uploads/downloads/2016/07/KOH-Etching-Info-2013_V2.pdf U Alberta KOH Etching]
+==Commercial Materials==
+*[http://transene.com/etch-compatibility/ Transene Etch Compatibility Chart]
+*[https://transene.com/etchants/ Transene Etchant List]
-Table of Wet Etch recipes from KNI Papers
+*[https://www.microchemicals.com/downloads/application_notes.html MicroChemicals trove of application notes]
-And general table from you, not from papers, maybe from recipes?
+==KNI Wet Etch Recipes Table==
 {| class="wikitable sortable"
@@ Line 55: / Line 105: @@
 ! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes
 |-
-| KNI CHA Al|| Al Etch Type D|| ~1000 || Highly || Al || High || Transene
+| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type A|| X || - || Al || Good || Matches Transene's expected rate
+|-
+| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type D|| X || - || Al || High || Matches Transene's expected rate
+|-
+| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
+|-
+| [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
+|-
+| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
 |-
-| KNI PECVD SiO2 || HF || ~1000 || Highly || SiO2 || High || measured 10/19
+| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
 |-
-| KNI PECVD SiN3|| Ex || ~1000 || Highly || SiN3 || High || measured 10/19
+| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
 |-
-| KNI PECVD a-Si|| KOH || ~1000 || Highly || Si || High || measured 10/19
+| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper
 |}
@@ Line 68: / Line 126: @@
 ==Liftoff==
-UCSB liftoff guidance:
+*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]
-https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques
+*[https://snf.stanford.edu/SNF/processes/process-modules/photolithography/lift-off-lol-procedures/liftoff Stanford SNF liftoff procedures]
 ==Electroplating==
-Electroplating materials supplier:
+*[https://www.technic.com/chemistry Technic electroplating materials supplier]
-https://www.technic.com/chemistry
 =Safety Resources=
-https://cleanroom.byu.edu/acid_safety
+*[[Lab Rules & Safety | KNI Lab Rules & Safety]]
-https://cleanroom.byu.edu/HF_safety
-https://cleanroom.byu.edu/solvent_safety
+*[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety]

Wet Chemistry Resources: Difference between revisions

Latest revision as of 06:19, 22 January 2025

Contents

Sample Cleaning Resources

Solvent Cleans

Etching Cleans

RCA Clean

Nanostrip Etch

Piranha Etch

HF Dip

Plasma Cleans

Wet Etching Resources

Reference Articles and Texts

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Other Procedures

Liftoff

Electroplating

Safety Resources

Navigation menu

Wet Chemistry Resources: Difference between revisions

Latest revision as of 06:19, 22 January 2025

Sample Cleaning Resources

Solvent Cleans

Etching Cleans

RCA Clean

Nanostrip Etch

Piranha Etch

HF Dip

Plasma Cleans

Wet Etching Resources

Reference Articles and Texts

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Other Procedures

Liftoff

Electroplating

Safety Resources

Navigation menu

Search