EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions

From the KNI Lab at Caltech
Jump to navigation Jump to search
No edit summary
Line 66: Line 66:


== Specifications ==
== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Manufacturer Data Sheet]
===== Specifications =====
===== Specifications =====
* Voltage Range: 20, 50 or 100 kV
* Voltage Range: 20, 50 or 100 kV

Revision as of 22:18, 26 May 2019

EBPG 5200
Wavelength-scale-Piezoelectric-Transducer Alp-Sipahigil.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B233C Steele
Lab Phone 626-395-1531 /1540
Manufacturer Raith Lithography BV
Model EBPG 5200
EBPG-5200.jpg

Description

The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.

Opertional Applications
  • Non-aligned electron beam lithography
  • Aligned (AKA direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

General SOPs
Sample Prep and Writing SOPs
Troubleshooting SOPs
Data Preparation Resources
Manufacturer Manuals

Specifications

Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA - > 200 nA
  • Main Field size: Up to 1 mm x 1 mm
  • Main Field resolution: 20 bit
  • Maximum writing frequency: 100 MHz
  • Aperture Sizes: 200 um, 300 um, 400 um
  • etc.