Difference between revisions of "Wet Chemistry Resources"

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| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
|-
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || X || Low || SiO<sub>2</sub> || High || Measured 11/19 by
| [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by

Revision as of 00:56, 3 December 2019

Sample Cleaning Resources

Solvent Cleans

Etching Cleans

Caution. All of these processes require a buddy and adequate chemical safety training.

RCA-1

Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.

Piranha Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

HF Dip

Removes native oxide from surfaces.

Plasma Cleans

Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.

Wet Etching Resources

Reference Articles and Texts

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Origin and Notes
KNI CHA Al Al Etch Type A X - Al Good Matches Transene's expected rate
KNI CHA Al Al Etch Type D X - Al High Matches Transene's expected rate
KNI CHA Al2O3 Phosphoric Acid X - - - Measured 11/19 by
KNI Tystar Furnace 1000°C SiO2 HF 111 Very Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C SiO2 HF 486 Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 200°C SiO2 HF 1398 High SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C Si3N4 Phosphoric Acid X - - - Measured 11/19 by
KNI PECVD a-Si KOH X High Si High Link here to KNI member's research paper

Other Procedures

Liftoff

Electroplating

Safety Resources