Difference between revisions of "Wet Chemistry Resources"

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{{NOINDEX|visible=no}}
=Sample Cleaning Resources=
=Sample Cleaning Resources=


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**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process]
**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process]
*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice
*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice
*'''Nanostrip (60°C)''' -Rinse with DI
**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm
**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf


==Etching Cleans==
==Etching Cleans==
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Caution.  All of these processes require a buddy and adequate chemical safety training.
Caution.  All of these processes require a buddy and adequate chemical safety training.


===RCA-1===
===RCA Clean===


Prepares wafers for high-temperature processing steps.  Standardized protocol developed by RCA in 1960s.
Prepares wafers for high-temperature processing steps.  Standardized protocol developed by RCA in 1960s.


*https://en.wikipedia.org/wiki/RCA_clean
*https://en.wikipedia.org/wiki/RCA_clean
===Nanostrip Etch===
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
*'''Nanostrip (60°C)''' -Rinse with DI
**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm
**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf


===Piranha Etch===
===Piranha Etch===


Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch]


*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch]
*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch]
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*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch]
*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch]
*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch]


===HF Dip===
===HF Dip===
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==KNI Wet Etch Recipes Table==
==KNI Wet Etch Recipes Table==
Table of Wet Etch recipes from KNI Papers
And general table from you, not from papers, maybe from recipes?


{| class="wikitable sortable"
{| class="wikitable sortable"
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| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
|-
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || X || Low || SiO<sub>2</sub> || High || Measured 11/19 by
| [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 10/19 by
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
|-
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper
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=Safety Resources=
=Safety Resources=


*KNI [[Lab Rules & Safety]]
*[[Lab Rules & Safety | KNI Lab Rules & Safety]]


*[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety]
*[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety]

Latest revision as of 18:20, 17 March 2022

Sample Cleaning Resources

Solvent Cleans

  • Acetone, IPA -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
  • Acetone, Methanol -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
  • Acetone, Methanol, IPA
  • Acetone, Methanol, IPA, DI Water
  • Remover PG (60°C), IPA -Caution, low flashpoint, do not leave unattended
  • Dichloromethane, IPA -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice

Etching Cleans

Caution. All of these processes require a buddy and adequate chemical safety training.

RCA Clean

Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.

Nanostrip Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

Piranha Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

HF Dip

Removes native oxide from surfaces.

Plasma Cleans

Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.

Wet Etching Resources

Reference Articles and Texts

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Origin and Notes
KNI CHA Al Al Etch Type A X - Al Good Matches Transene's expected rate
KNI CHA Al Al Etch Type D X - Al High Matches Transene's expected rate
KNI CHA Al2O3 Phosphoric Acid X - - - Measured 11/19 by
KNI Tystar Furnace 1000°C SiO2 HF 111 Very Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C SiO2 HF 486 Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 200°C SiO2 HF 1398 High SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C Si3N4 Phosphoric Acid X - - - Measured 11/19 by
KNI PECVD a-Si KOH X High Si High Link here to KNI member's research paper

Other Procedures

Liftoff

Electroplating

Safety Resources