Difference between revisions of "Wet Chemistry Resources"
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=Sample Cleaning Resources= | =Sample Cleaning Resources= | ||
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**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process] | **[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process] | ||
*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice | *'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice | ||
==Etching Cleans== | ==Etching Cleans== | ||
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Caution. All of these processes require a buddy and adequate chemical safety training. | Caution. All of these processes require a buddy and adequate chemical safety training. | ||
===RCA | ===RCA Clean=== | ||
Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s. | Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s. | ||
*https://en.wikipedia.org/wiki/RCA_clean | *https://en.wikipedia.org/wiki/RCA_clean | ||
===Nanostrip Etch=== | |||
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior. | |||
*'''Nanostrip (60°C)''' -Rinse with DI | |||
**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm | |||
**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf | |||
===Piranha Etch=== | ===Piranha Etch=== | ||
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior. | Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior. | ||
*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch] | |||
*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch] | *[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch] | ||
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*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch] | *[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch] | ||
===HF Dip=== | ===HF Dip=== | ||
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==Plasma Cleans== | ==Plasma Cleans== | ||
Plasma cleaning via oxygen,argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Tergeo Plus Plasma Cleaner | Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Tergeo Plus Plasma Cleaner.]] | ||
=Wet Etching Resources= | =Wet Etching Resources= | ||
== | ==Reference Articles and Texts== | ||
*[http://ieeexplore.ieee.org/abstract/document/546406/ Etch | *[http://ieeexplore.ieee.org/abstract/document/546406/ Etch Rates for Micromachining Processing] | ||
*[https://ieeexplore.ieee.org/document/1257354 Etch | *[https://ieeexplore.ieee.org/document/1257354 Etch Rates for Micromachining Processing-Part II] | ||
*[https://vector.umd.edu/images/links/Handbook_of_Metal_Etchants.pdf Handbook of Metal Etchants] | *[https://vector.umd.edu/images/links/Handbook_of_Metal_Etchants.pdf Handbook of Metal Etchants] | ||
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*[https://cleanroom.byu.edu/wet_etch BYU Etching list] | *[https://cleanroom.byu.edu/wet_etch BYU Etching list] | ||
*[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich | *[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich Wet Etching info] | ||
*[https://cleanroom.byu.edu/chemical_etching.html BYU Etching Guidance] | *[https://cleanroom.byu.edu/chemical_etching.html BYU Etching Guidance] | ||
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Etching_Recipes UCSB Wet Etching Recipes] | *[https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Etching_Recipes UCSB Wet Etching Recipes] | ||
*[https://nanolab.berkeley.edu/public/manuals/process_manual.shtml Berkeley Marvell Nanofab] | *[https://nanolab.berkeley.edu/public/manuals/process_manual.shtml Berkeley Marvell Nanofab Process Manual] | ||
*[https://cleanroom.byu.edu/KOH BYU KOH processing] | *[https://cleanroom.byu.edu/KOH BYU KOH processing] | ||
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==KNI Wet Etch Recipes Table== | ==KNI Wet Etch Recipes Table== | ||
{| class="wikitable sortable" | {| class="wikitable sortable" | ||
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! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes | ! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes | ||
|- | |- | ||
| KNI CHA Al|| Al Etch Type | | [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type A|| X || - || Al || Good || Matches Transene's expected rate | ||
|- | |- | ||
| KNI | | [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type D|| X || - || Al || High || Matches Transene's expected rate | ||
|- | |- | ||
| KNI | | [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by | ||
|- | |- | ||
| KNI PECVD a-Si|| KOH || | | [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim | ||
|- | |||
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim | |||
|- | |||
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim | |||
|- | |||
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by | |||
|- | |||
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper | |||
|} | |} | ||
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance] | *[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance] | ||
*[https://snf.stanford.edu/SNF/processes/process-modules/photolithography/lift-off-lol-procedures/liftoff Stanford SNF liftoff procedures] | |||
==Electroplating== | ==Electroplating== | ||
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=Safety Resources= | =Safety Resources= | ||
*[[Lab Rules & Safety | KNI Lab Rules & Safety]] | |||
https://cleanroom.byu.edu/solvent_safety | *[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety] | ||
Latest revision as of 18:20, 17 March 2022
Sample Cleaning Resources
Solvent Cleans
- Acetone, IPA -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
- Acetone, Methanol -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
- Acetone, Methanol, IPA
- Acetone, Methanol, IPA, DI Water
- Remover PG (60°C), IPA -Caution, low flashpoint, do not leave unattended
- Nano Remover PG Spec Sheet
- Columbia University Remover PG Process
- Dichloromethane, IPA -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice
Etching Cleans
Caution. All of these processes require a buddy and adequate chemical safety training.
RCA Clean
Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.
Nanostrip Etch
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.
- Nanostrip (60°C) -Rinse with DI
Piranha Etch
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.
HF Dip
Removes native oxide from surfaces.
Plasma Cleans
Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.
Wet Etching Resources
Reference Articles and Texts
External Laboratories
Commercial Materials
KNI Wet Etch Recipes Table
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Origin and Notes |
|---|---|---|---|---|---|---|
| KNI CHA Al | Al Etch Type A | X | - | Al | Good | Matches Transene's expected rate |
| KNI CHA Al | Al Etch Type D | X | - | Al | High | Matches Transene's expected rate |
| KNI CHA Al2O3 | Phosphoric Acid | X | - | - | - | Measured 11/19 by |
| KNI Tystar Furnace 1000°C SiO2 | HF | 111 | Very Low | SiO2 | High | Measured 11/19 by Alex Wertheim |
| KNI PECVD 350°C SiO2 | HF | 486 | Low | SiO2 | High | Measured 11/19 by Alex Wertheim |
| KNI PECVD 200°C SiO2 | HF | 1398 | High | SiO2 | High | Measured 11/19 by Alex Wertheim |
| KNI PECVD 350°C Si3N4 | Phosphoric Acid | X | - | - | - | Measured 11/19 by |
| KNI PECVD a-Si | KOH | X | High | Si | High | Link here to KNI member's research paper |