Difference between revisions of "Wet Chemistry Resources"

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{{NOINDEX|visible=no}}
=Sample Cleaning Resources=
 
*[https://www.sciencedirect.com/book/9780323510844/handbook-of-silicon-wafer-cleaning-technology#book-description Handbook of Silicon Wafer Cleaning Technology]


cleaning procedures links, breakout
*[https://www.microsi.com/silicon-wafer-cleaning/ UC Irvine Cleaning Procedures for Silicon]


=Sample Cleaning Resources=
*[https://cleanroom.byu.edu/clean BYU Substrate Cleaning Guide]


https://cleanroom.byu.edu/clean
*https://www.microsi.com/silicon-wafer-cleaning/


==Solvent Cleans==
==Solvent Cleans==


*'''Acetone, IPA'''
*[https://www-s.mechse.uiuc.edu/cleanroom/files/Procedures/Process/Wafer%20Cleaning%20Procedure%20V1.0.pdf UIUC Wafer Cleaning Procedure]
**Solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
 
*'''Acetone, Methanol'''
*'''Acetone, IPA''' -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
**Similar to above except Methanol is more toxic, and a polar chemical versus IPA which is non-polar
*'''Acetone, Methanol''' -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
*Acetone, Methanol, IPA
*'''Acetone, Methanol, IPA'''
*Acetone, Methanol, IPA, DI Water
*'''Acetone, Methanol, IPA, DI Water'''
*Remover PG (50°C), IPA
*'''Remover PG (60°C), IPA''' -Caution, low flashpoint, do not leave unattended
*'''Dichloromethane, IPA'''
**Nano Remover PG Spec Sheet
**Caution, high evaporation rate may leave residue and beakers get quickly condense water/ice
**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process]
*Nanostrip?
*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice


==Etching Cleans==
==Etching Cleans==


===RCA-1===
Caution.  All of these processes require a buddy and adequate chemical safety training.
 
===RCA Clean===
 
Prepares wafers for high-temperature processing steps.  Standardized protocol developed by RCA in 1960s.
 
*https://en.wikipedia.org/wiki/RCA_clean
 
===Nanostrip Etch===
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
 
*'''Nanostrip (60°C)''' -Rinse with DI
**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm
**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf


===Piranha Etch===
===Piranha Etch===
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface.  If there is significant organic contamination, perform solvent clean prior.
*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch]
*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch]
*[https://www.chemistry.mcmaster.ca/moran-mirabal/resources/PIRANHA-CLEAN-5-2014.pdf McMaster University Piranha Etch]
*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch]


===HF Dip===
===HF Dip===
Removes native oxide from surfaces.
*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-hf-2-percent-dip.pdf UCI Irvine HF 2% Dip]
*[http://www.nanofab.ubc.ca/processes/cleaning/boe-buffered-oxide-etch-and-hf-dip/ UBC BOE Etch and HF Dip]


==Plasma Cleans==
==Plasma Cleans==
Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes.  More information can be found on the tool page for the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Tergeo Plus Plasma Cleaner.]]


=Wet Etching Resources=
=Wet Etching Resources=


find etch list book and other links
==Reference Articles and Texts==


==Research Papers and Books==
*[http://ieeexplore.ieee.org/abstract/document/546406/ Etch Rates for Micromachining Processing]


*[http://ieeexplore.ieee.org/abstract/document/546406/ Etch rates for micromachining processing]
*[https://ieeexplore.ieee.org/document/1257354 Etch Rates for Micromachining Processing-Part II]


*[https://ieeexplore.ieee.org/document/1257354 Etch rates for micromachining processing-Part II]
*[https://vector.umd.edu/images/links/Handbook_of_Metal_Etchants.pdf Handbook of Metal Etchants]


==External Laboratories==
==External Laboratories==
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*[https://cleanroom.byu.edu/wet_etch BYU Etching list]
*[https://cleanroom.byu.edu/wet_etch BYU Etching list]


*[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich wet etch info]
*[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich Wet Etching info]
 
*[https://cleanroom.byu.edu/chemical_etching.html BYU Etching Guidance]
 
*[https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Etching_Recipes UCSB Wet Etching Recipes]
 
*[https://nanolab.berkeley.edu/public/manuals/process_manual.shtml Berkeley Marvell Nanofab Process Manual]


also find alternative:
*[https://cleanroom.byu.edu/KOH BYU KOH processing]
*[https://cleanroom.byu.edu/KOH BYU KOH processing]


*[https://cleanroom.byu.edu/chemical_etching.html BYU Etching Guidance]
*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-anisotropic-si-etch-using-koh.pdf UC Irvine KOH Etching]
 
*[https://www.nanofab.ualberta.ca/wp-content/uploads/downloads/2016/07/KOH-Etching-Info-2013_V2.pdf U Alberta KOH Etching]


==Commercial Materials==
==Commercial Materials==
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*[https://transene.com/etchants/ Transene Etchant List]
*[https://transene.com/etchants/ Transene Etchant List]


*[https://www.microchemicals.com/downloads/application_notes.html MicroChemicals trove of application notes]


==KNI Wet Etch Recipes Table==
==KNI Wet Etch Recipes Table==
Table of Wet Etch recipes from KNI Papers
And general table from you, not from papers, maybe from recipes?


{| class="wikitable sortable"
{| class="wikitable sortable"
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! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes  
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes  
|-
|-
| KNI CHA Al|| Al Etch Type D|| ~1000 || Highly || Al || High || Transene
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type A|| X || - || Al || Good || Matches Transene's expected rate
|-
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type D|| X || - || Al || High || Matches Transene's expected rate
|-
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
|-
| [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
|-
| KNI PECVD SiO2 || HF || ~1000 || Highly || SiO2 || High || measured 10/19
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim
|-
|-
| KNI PECVD SiN3|| Ex || ~1000 || Highly || SiN3 || High || measured 10/19
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by
|-
|-
| KNI PECVD a-Si|| KOH || ~1000 || Highly || Si || High || measured 10/19
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper
|}
|}


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*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]
*[https://snf.stanford.edu/SNF/processes/process-modules/photolithography/lift-off-lol-procedures/liftoff Stanford SNF liftoff procedures]


==Electroplating==
==Electroplating==
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=Safety Resources=
=Safety Resources=


https://cleanroom.byu.edu/acid_safety
*[[Lab Rules & Safety | KNI Lab Rules & Safety]]
 
https://cleanroom.byu.edu/HF_safety


https://cleanroom.byu.edu/solvent_safety
*[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety]

Latest revision as of 18:20, 17 March 2022

Sample Cleaning Resources

Solvent Cleans

  • Acetone, IPA -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate
  • Acetone, Methanol -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar
  • Acetone, Methanol, IPA
  • Acetone, Methanol, IPA, DI Water
  • Remover PG (60°C), IPA -Caution, low flashpoint, do not leave unattended
  • Dichloromethane, IPA -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice

Etching Cleans

Caution. All of these processes require a buddy and adequate chemical safety training.

RCA Clean

Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.

Nanostrip Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

Piranha Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

HF Dip

Removes native oxide from surfaces.

Plasma Cleans

Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.

Wet Etching Resources

Reference Articles and Texts

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Origin and Notes
KNI CHA Al Al Etch Type A X - Al Good Matches Transene's expected rate
KNI CHA Al Al Etch Type D X - Al High Matches Transene's expected rate
KNI CHA Al2O3 Phosphoric Acid X - - - Measured 11/19 by
KNI Tystar Furnace 1000°C SiO2 HF 111 Very Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C SiO2 HF 486 Low SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 200°C SiO2 HF 1398 High SiO2 High Measured 11/19 by Alex Wertheim
KNI PECVD 350°C Si3N4 Phosphoric Acid X - - - Measured 11/19 by
KNI PECVD a-Si KOH X High Si High Link here to KNI member's research paper

Other Procedures

Liftoff

Electroplating

Safety Resources