Difference between revisions of "Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe"

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* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Nova 600 NanoLab Data Sheet] (not all parameters apply to our instrument, see below for details specific to the KNI's Nova 600)
* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Nova 600 NanoLab Data Sheet] (not all parameters apply to our instrument, see below for details specific to the KNI's Nova 600)
===== SEM Specifications =====
===== SEM Specifications =====
* 0.5 to 30.0 kV
* Minimum Feature Size Resolved Immersion Mode: ~5 nm
* Apertures: 10 mm, 15 mm, 20 mmm, 30 mm
* Voltage Range: 0.2 to 30.0 kV
* etc.
* Current Range: ~10 pA to 20 nA
* Apertures: 10 μm, 15 μm, 20 μm, 30 μm
* Eucentric Height: ~5.15 mm working distance (WD)
* Stage Range: +/- 80 mm X & Y travel, 12 mm Z travel, -12 to 58° tilt, 360° rotation
* ETD Grid Bias Range: -150 to 300 V
* TLD Bias Range: -100 to 150 V
* Ultimate Vacuum: 5e-7 mbar
 
===== Ga-FIB Specifications =====
===== Ga-FIB Specifications =====
* 5.0 to 30.0 kV
* Minumum Probe Size Achieved: ~7 nm
* 10 pA - 20 nA
* Minimum Feature Size Etched: ~25 nm
* etc.
* Minimum Feature Size Imaged: ~10 nm
* Voltage Range: 5 to 30 kV
* Current Range: 1 pA to 20 nA
* Eucentric Height: ~5.15 mm working distance (WD)
* Stage Tilt to be perpendicular to Ga-FIB: 52°
* ETD Grid Bias Range: -150 to 300 V
* TLD Bias Range: -100 to 150 V

Revision as of 23:32, 5 May 2019

Nova 600 NanoLab
KNI-Si-and-Pt-Pillar.jpg
Instrument Type Microscopy
Techniques SEM, Ga-FIB, Omniprobe,
Immersion Lens Imaging,
GIS, Cross-sectioning,
TEM Lamella Sample Prep
Staff Manager Matthew S. Hunt, PhD
Staff Email matthew.hunt@caltech.edu
Staff Phone 626-395-5994
Reserve time on LabRunr
Request training by email
Sign up for SEM-FIB email list
Lab Location B233B Steele
Lab Phone 626-395-1534
Manufacturer FEI (now Thermo Fisher)
Model {{{Model}}}
Nova-NanoLab-600.jpg

Description

The Nova 600 is a "dual beam" system that combines a field emission gun (FEG) scanning electron microscope (SEM) with a gallium focused ion beam (Ga-FIB). It can be used to capture high quality images (with sub-10 nm resolution) and perform site-specific etching and material deposition (with sub-50 nm resolution). It is also equipped with an Omniprobe nanomanipulator, which can be used to lift out lamella samples prepared for use in a transmission electron microscope (TEM). See a full list of training and educational resources for this instrument below.

SEM Applications
  • Ultra-High-Resolution Imaging (Immersion Mode aka UHR Mode)
  • High-Resolution Imaging (Field-Free Mode aka Normal Mode)
  • Secondary Electron (SE) imaging with an Everhart-Thornley Detector (ETD) & Through-the-Lens Detector (TLD)
  • Backscattered Electron (BSE) imaging with a TLD
  • Platinum deposition via Gas Injection System (GIS)
  • Automated imaging with RunScript program & AutoScript language
Ga-FIB Applications
  • Directly etch patterns into material
  • Cutting & Imaging Cross-Sections
  • TEM Lamella Sample Preparation using an Omniprobe for Liftout
  • Platinum & SiOx deposition via GIS
  • Enhanced etch with XeF2 via GIS
  • Automated patterning with RunScript program & AutoScript language

Resources

SOPs & Troubleshooting
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals
Simulation Software
Order Your Own Stubs

Specifications

Manufacturer Specifications
SEM Specifications
  • Minimum Feature Size Resolved Immersion Mode: ~5 nm
  • Voltage Range: 0.2 to 30.0 kV
  • Current Range: ~10 pA to 20 nA
  • Apertures: 10 μm, 15 μm, 20 μm, 30 μm
  • Eucentric Height: ~5.15 mm working distance (WD)
  • Stage Range: +/- 80 mm X & Y travel, 12 mm Z travel, -12 to 58° tilt, 360° rotation
  • ETD Grid Bias Range: -150 to 300 V
  • TLD Bias Range: -100 to 150 V
  • Ultimate Vacuum: 5e-7 mbar
Ga-FIB Specifications
  • Minumum Probe Size Achieved: ~7 nm
  • Minimum Feature Size Etched: ~25 nm
  • Minimum Feature Size Imaged: ~10 nm
  • Voltage Range: 5 to 30 kV
  • Current Range: 1 pA to 20 nA
  • Eucentric Height: ~5.15 mm working distance (WD)
  • Stage Tilt to be perpendicular to Ga-FIB: 52°
  • ETD Grid Bias Range: -150 to 300 V
  • TLD Bias Range: -100 to 150 V