EBPG 5200: 100 kV Electron Beam Lithography: Difference between revisions

From the KNI Lab at Caltech
Jump to navigation Jump to search
Line 28: Line 28:


== Resources ==
== Resources ==
===== SOPs & Troubleshooting =====
===== General SOPs =====
* [https://caltech.box.com/s/qzhf1h1su3a1vadl6p76mg6tav49uisn EBPG SOP]
* [https://caltech.box.com/s/qzhf1h1su3a1vadl6p76mg6tav49uisn EBPG SOP]
* [https://caltech.box.com/s/cwp88iw2q5t8eygl114zs8ywlhraxo16 EBPG reservation and use policy]
* [https://caltech.box.com/s/cwp88iw2q5t8eygl114zs8ywlhraxo16 EBPG reservation and use policy]

Revision as of 00:28, 20 May 2019

EBPG 5200
Wavelength-scale-Piezoelectric-Transducer Alp-Sipahigil.jpg
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B233C Steele
Lab Phone 626-395-1531 /1540
Manufacturer Raith Lithography BV
Model EBPG 5200
EBPG-5200-A230.jpg

Description

The Raith EBPG 5200 is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 3" wafers, piece parts from a couple of mm to 3" diameter and up to 6.35mm thick, and 6" mask plates. This instrument can be outfitted with substrate holders to handle up to 200mm wafers. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.

Opertional Applications
  • Non-aligned electron beam lithography
  • Aligned (AKA direct-write) electron beam lithography
Scientific / technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

General SOPs
Sample Prep and Writing SOPs
Troubleshooting SOPs
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals

Specifications

Manufacturer Specifications
Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA - >200 nA
  • Main Field size: Up to 1mm x 1mm
  • Main Field resolution: 20 bit
  • Maximum writing frequency: 100 MHz
  • Aperture Sizes: 200um, 300um, 400um
  • etc.
Retrieved from "https://lab.kni.caltech.edu/index.php?title=EBPG_5200:_100_kV_Electron_Beam_Lithography&oldid=1327"