EBPG 5000+: 100 kV Electron Beam Lithography: Difference between revisions
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* [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT no route to host recovery SOP] | * [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT no route to host recovery SOP] | ||
* [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] | * [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] | ||
===== Data Preparation Resources ===== | |||
* [https://caltech.box.com/s/fql3uk5i3j8kv7tkx9auveomg0clubhn App Note: 3D Surface Proximity Effect Correction] | |||
* [https://caltech.box.com/s/a0mym20drharh2fj1ne8nex6a0jw3te4 App Note: Fracture Optimization] | |||
* [https://caltech.box.com/s/ef3zou8b9xk597jxs7bs1s1yck1lo5cu App Note: Writing Time Optimization] | |||
* [https://caltech.box.com/s/c8hsz4opsgb0j8nmqq48v64wnlxth5l5 App Note: Formulas in Beamer Modules] | |||
* [https://caltech.box.com/s/wnx3fid41baefile9epmm797tbf81z59 App Note: Multipass] | |||
* [https://caltech.box.com/s/yh1ku02vjnf3ew8uvmjbyn8hv5t0em72 App Note: Mixed Export Options] | |||
* [https://caltech.box.com/s/9wbovly55qu2plfmoian6a7ocbw7pk2h App Note: GPF Formatter] | |||
===== Manufacturer Manuals ===== | |||
* [https://caltech.box.com/s/gvgy6vpty5g33qvf9pdef629770vmjiw Layout Beamer Release Notes] | |||
* [https://caltech.box.com/s/6047un2cme4wwgs9ztvexjelp5x7e79p Layout Beamer Manual] | |||
== Specifications == | == Specifications == | ||
Revision as of 03:32, 28 May 2019
|
Description
The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5000+ page)
Troubleshooting SOPs
- Troubleshooting Guide
- Information Archive Beam
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
Data Preparation Resources
- App Note: 3D Surface Proximity Effect Correction
- App Note: Fracture Optimization
- App Note: Writing Time Optimization
- App Note: Formulas in Beamer Modules
- App Note: Multipass
- App Note: Mixed Export Options
- App Note: GPF Formatter
Manufacturer Manuals
Specifications
Manufacturer Specifications
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200μm, 300μm, 400μm