EBPG 5000+: 100 kV Electron Beam Lithography: Difference between revisions
Jump to navigation
Jump to search
mNo edit summary |
|||
Line 34: | Line 34: | ||
===== Sample Prep and Writing SOPs ===== | ===== Sample Prep and Writing SOPs ===== | ||
* [https://caltech.box.com/s/ys4qbxnsqfqbrdo4dm7t48z1z9dljuwi EBPG High Resolution Mode SOP] | * [https://caltech.box.com/s/ys4qbxnsqfqbrdo4dm7t48z1z9dljuwi EBPG High Resolution Mode SOP] | ||
* [https://caltech.box.com/s/ | * [https://caltech.box.com/s/6yp4eq33y84y12hon075sbh1t7uukvay EBPG Preparing sample for exposure SOP] | ||
* [https://caltech.box.com/s/l42cjo7q7ughvvkqm8r6i4jzscq4lihe EBPG Beam Adjustment SOP] | |||
* [https://caltech.box.com/s/31qwx2yq8hisxgvelrsbpap3g4pgpcjl EBPG Marker definition Procedure] | * [https://caltech.box.com/s/31qwx2yq8hisxgvelrsbpap3g4pgpcjl EBPG Marker definition Procedure] | ||
* [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | * [https://caltech.box.com/s/ah2irxdmlw1x4xiodi8wdhxa6yn671uu EBPG JOY Marker Procedure] | ||
Line 44: | Line 45: | ||
* [https://caltech.box.com/s/55zji9vfs8kuxl0aye1sw1iy8xi0rd9c Information Archive Beam] | * [https://caltech.box.com/s/55zji9vfs8kuxl0aye1sw1iy8xi0rd9c Information Archive Beam] | ||
* [https://caltech.box.com/s/afdyjxjo54l1v2ukubon5ntin73aflc1 Lindgren MACS SOP] | * [https://caltech.box.com/s/afdyjxjo54l1v2ukubon5ntin73aflc1 Lindgren MACS SOP] | ||
* [https://caltech.box.com/s/tf87blqopht0y51hy4agn2fsfjh7wot9 EBPG Emergency air cylinder SOP] | * [https://caltech.box.com/s/tf87blqopht0y51hy4agn2fsfjh7wot9 EBPG Emergency air cylinder SOP] | ||
* [https://caltech.box.com/s/e9jsz2kisfzjsyeomqr5gmjj3fc0nifx EBPG Unlocking the stage SOP] | |||
* [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT not initialized SOP] | |||
* [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT no route to host recovery SOP] | * [https://caltech.box.com/s/pol1ceg2sbjsmbb6b5vtsw641hwj5r2l EBPG SAEHT no route to host recovery SOP] | ||
* [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] | * [https://caltech.box.com/s/1fe4803rl38fa7a7w50r77c4nf64818l EBPG hotbox slave communications fault recovery SOP] |
Revision as of 03:31, 28 May 2019
|
Description
The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high-resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation (i.e. with an accelerating voltage of 100 kV, the average energy per electron is 100 keV).
Operational Applications
- Non-aligned electron beam lithography
- Aligned (aka direct-write) electron beam lithography
Scientific / Technical Applications
- Nanophotonics
- Nano-optics
- Waveguides
Resources
General SOPs
Sample Prep and Writing SOPs
- EBPG High Resolution Mode SOP
- EBPG Preparing sample for exposure SOP
- EBPG Beam Adjustment SOP
- EBPG Marker definition Procedure
- EBPG JOY Marker Procedure
- EBPG Disable marker height check SOP
- EBPG Remote Access SOP (log into LabRunr and download SOP from EBPG 5000+ page)
Troubleshooting SOPs
- Troubleshooting Guide
- Information Archive Beam
- Lindgren MACS SOP
- EBPG Emergency air cylinder SOP
- EBPG Unlocking the stage SOP
- EBPG SAEHT not initialized SOP
- EBPG SAEHT no route to host recovery SOP
- EBPG hotbox slave communications fault recovery SOP
Specifications
Manufacturer Specifications
Specifications
- Voltage Range: 20, 50 or 100 kV
- Current Range: 50 pA to 200 nA
- Main Field Size: Up to 1 mm x 1 mm
- Main Field Resolution: 20 bit
- Maximum Writing Frequency: 100 MHz
- Aperture Sizes: 200μm, 300μm, 400μm